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Semiconductors

, Volume 52, Issue 6, pp 717–722 | Cite as

Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

  • V. A. Volodin
  • V. A. Sachkov
  • M. P. Sinyukov
Spectroscopy, Interaction with Radiation

Abstract

The Raman spectra of GaAs/AlAs(100) superlattices are calculated and studied experimentally for various wave-vector directions. The experiments are performed when applying a confocal optical microscope combined with a micro-Raman spectrometer for various scattering geometries both for phonons with a wave vector directed along the normal to a superlattice and in the in-plane geometry. The frequencies and eigenvectors of phonons are calculated in the extended Born model approximation taking into account Coulomb interaction in the rigid-ion approximation. The Raman spectra are calculated in the scope of the deformation- potential mechanism; herewith, it turns out that additional peaks, which are not described in the scope of this approach, appear in the experimental spectra. It seems likely that these peaks appear due to the manifestation of Raman scattering forbidden by selection rules under resonance conditions. An attempt is made to explain the appearance of these peaks in the experimental spectra within the scope of inelastic phonon scattering at bound charges (phonons with a large dipole moment).

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. A. Volodin
    • 1
    • 2
  • V. A. Sachkov
    • 3
  • M. P. Sinyukov
    • 1
  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk State UniversityNovosibirskRussia
  3. 3.Omsk Scientific Center, Siberian BranchRussian Academy of SciencesOmskRussia

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