, Volume 52, Issue 6, pp 789–796 | Cite as

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

  • T. V. Malin
  • D. S. Milakhin
  • V. G. Mansurov
  • Yu. G. Galitsyn
  • A. S. Kozhuhov
  • V. V. Ratnikov
  • A. N. Smirnov
  • V. Yu. Davydov
  • K. S. Zhuravlev
Fabrication, Treatment, and Testing of Materials and Structures


The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • T. V. Malin
    • 1
  • D. S. Milakhin
    • 1
  • V. G. Mansurov
    • 1
  • Yu. G. Galitsyn
    • 1
  • A. S. Kozhuhov
    • 1
  • V. V. Ratnikov
    • 2
  • A. N. Smirnov
    • 2
  • V. Yu. Davydov
    • 2
  • K. S. Zhuravlev
    • 1
    • 3
  1. 1.Rzhanov Institute of Semiconductor PhysicsRussian Academy of Sciences, Siberian BranchNovosibirskRussia
  2. 2.Ioffe InstituteSt. PetersburgRussia
  3. 3.Novosibirsk State UniversityNovosibirskRussia

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