Semiconductors

, Volume 52, Issue 5, pp 664–666 | Cite as

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

  • A. V. Vasev
  • M. A. Putyato
  • V. V. Preobrazhenskii
  • A. K. Bakarov
  • A. I. Toropov
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
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Abstract

The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions—orderdisorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex(2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. V. Vasev
    • 1
  • M. A. Putyato
    • 1
  • V. V. Preobrazhenskii
    • 1
  • A. K. Bakarov
    • 1
  • A. I. Toropov
    • 1
  1. 1.Institute of Semiconductor PhysicsSiberian Branch of Russian Academy of SciencesNovosibirskRussia

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