Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
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The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
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- 8.A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, and A. A. Lazarenko, in Proceedings 24th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, 2016), p. 45.Google Scholar