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Semiconductors

, Volume 52, Issue 5, pp 605–608 | Cite as

The Features of GaAs Nanowire SEM Images

  • I. P. Soshnikov
  • K. P. Kotlyar
  • N. A. Bert
  • D. A. Kirilenko
  • A. D. Bouravleuv
  • G. E. Cirlin
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
  • 27 Downloads

Abstract

The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • I. P. Soshnikov
    • 1
    • 2
    • 3
  • K. P. Kotlyar
    • 1
    • 4
  • N. A. Bert
    • 2
  • D. A. Kirilenko
    • 2
    • 5
  • A. D. Bouravleuv
    • 1
    • 2
    • 3
  • G. E. Cirlin
    • 1
    • 2
    • 3
    • 4
  1. 1.St. Petersburg Academic University Russian Academy of SciencesSt. PetersburgRussia
  2. 2.Ioffe InstituteSt. PetersburgRussia
  3. 3.Institute for Analytical Instrumentation Russian Academy of SciencesSt. PetersburgRussia
  4. 4.St. Petersburg State UniversitySt. PetersburgRussia
  5. 5.ITMO UniversitySt. PetersburgRussia

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