Semiconductors

, Volume 52, Issue 5, pp 593–596 | Cite as

Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer

  • V. M. Mikoushkin
  • V. V. Bryzgalov
  • S. Yu. Nikonov
  • A. P. Solonitsyna
  • D. E. Marchenko
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
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Abstract

Detailed information on GaAs oxide properties is important for solving the problem of passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical compositions of the native oxide layer grown on the atomically clean surface of an n-GaAs (100) wafer etched by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy. It has been revealed that the oxide layer is essentially enriched in the Ga2O3 phase which is known to be a quite good dielectric as compared to As2O3. The gallium to arsenic ratio reaches the value as high as [Ga]/[As] = 1.5 in the course of oxidation. The Ga-enrichment occurs supposedly due to diffusion away of As released in preferential oxidation of Ga atoms. A band diagram was constructed for the native oxide nanolayer on the n-GaAs wafer. It has been shown that this natural nanostructure has features of a p–n heterojunction.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. M. Mikoushkin
    • 1
  • V. V. Bryzgalov
    • 1
  • S. Yu. Nikonov
    • 1
  • A. P. Solonitsyna
    • 1
  • D. E. Marchenko
    • 2
    • 3
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.Technische Universität DresdenDresdenGermany
  3. 3.Helmholtz-Zentrum BESSY IIGerman-Russian LaboratoryBerlinGermany

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