Semiconductors

, Volume 52, Issue 5, pp 667–670 | Cite as

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

  • V. N. Jmerik
  • T. V. Shubina
  • D. V. Nechaev
  • A. N. Semenov
  • D. A. Kirilenko
  • V. Yu. Davydov
  • A. N. Smirnov
  • I. A. Eliseev
  • G. Posina
  • S. V. Ivanov
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
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Abstract

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. N. Jmerik
    • 1
  • T. V. Shubina
    • 1
  • D. V. Nechaev
    • 1
  • A. N. Semenov
    • 1
  • D. A. Kirilenko
    • 1
  • V. Yu. Davydov
    • 1
  • A. N. Smirnov
    • 1
  • I. A. Eliseev
    • 1
  • G. Posina
    • 2
  • S. V. Ivanov
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.Department of Physics, Chemistry and Biology (IFM)Linköping UniversityLinköpingSweden

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