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Semiconductors

, Volume 52, Issue 4, pp 462–464 | Cite as

Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

  • G. E. Cirlin
  • R. R. Reznik
  • I. V. Shtrom
  • A. I. Khrebtov
  • Yu. B. Samsonenko
  • S. A. Kukushkin
  • T. Kasama
  • N. Akopian
  • L. Leonardo
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties
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Abstract

III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • G. E. Cirlin
    • 1
    • 2
    • 3
    • 4
  • R. R. Reznik
    • 1
    • 2
    • 3
    • 4
  • I. V. Shtrom
    • 1
    • 3
  • A. I. Khrebtov
    • 1
    • 2
  • Yu. B. Samsonenko
    • 1
    • 2
    • 3
  • S. A. Kukushkin
    • 5
  • T. Kasama
    • 6
  • N. Akopian
    • 6
  • L. Leonardo
    • 6
  1. 1.St. Petersburg Academic UniversityRussian Academy of SciencesSt. PetersburgRussia
  2. 2.ITMO UniversitySt. PetersburgRussia
  3. 3.Institute for Analytical InstrumentationRussian Academy of SciencesSt. PetersburgRussia
  4. 4.Peter the Great Polytechnic UniversitySt. PetersburgRussia
  5. 5.Institute of Problems of Mechanical EngineeringRussian Academy of ScienceSt. PetersburgRussia
  6. 6.DTU PhotonicsTechnical University of DenmarkDenmarkGermany

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