Skip to main content
SpringerLink
Log in

The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

  • Fabrication, Treatment, and Testing of Materials and Structures
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, I s , and barrier height, Φ b , were not noticeable after the irradiation. However, the series resistance, R s , has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
$34.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or eBook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P. Godignon et al., IEEE Trans. Ind. Electron. 58, 2582 (2011).

    Article  Google Scholar 

  2. K. Çinar, C. Coşkun, Ş. Aydoğan, H. Asil, and E. Gür, Nucl. Instrum. Methods Phys. Res. B 268, 616 (2010).

    Article  ADS  Google Scholar 

  3. Z. Lin, Z. Yi-Men, Z. Yu-Ming, H. Chao, and M. Yong-Ji, Chin. Phys. B 18, 3490 (2009).

    Article  ADS  Google Scholar 

  4. S. Khanna, A. Noor, S. Neeleshwar, and M. S. Tyagi, Int. J. Electron. 98, 1733 (2011).

    Article  Google Scholar 

  5. H. Ohyama et al., J. Mater. Sci. Mater. Electron. 16, 455 (2005).

    Article  Google Scholar 

  6. Z. Lin, Z. Yi-Men, Z. Yu-Ming, and H. Chao, J. Semicond. 31, 114006 (2010).

    Article  ADS  Google Scholar 

  7. Z. Luo et al., IEEE Trans. Nucl. Sci. 50, 1821 (2003).

    Article  ADS  Google Scholar 

  8. S. Nigam, Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, et al., Appl. Phys. Lett. 81, 2385 (2002).

    Article  ADS  Google Scholar 

  9. R. D. Harris and A. J. Frasca, IEEE Trans. Nucl. Sci. 53, 1995 (2006).

    Article  ADS  Google Scholar 

  10. J. Benkovska, L. Stuchlikova, D. Buc, and L. Čaplovic, Phys. Status Solidi 209, 1384 (2012).

    Article  ADS  Google Scholar 

  11. A. T. Paradzah, E. Omotoso, M. J. Legodi, F. D. Auret, W. E. Meyer, and M. Diale, J. Electron. Mater. 45, 4177 (2016).

    Article  ADS  Google Scholar 

  12. F. Chen, Y. Zhang, Y. Zhang, X. Tang, Y. Wang, and W. Chen, Chin. Phys. B 21, 37304 (2012).

    Article  Google Scholar 

  13. V. Lakshmi Devi, Open Appl. Phys. J. 5, 1 (2012).

    Article  ADS  Google Scholar 

  14. M. Ravinandan, P. Koteswara Rao, and V. Rajagopal Reddy, J. Optoelectron. Adv. Mater. 10, 2787 (2008).

    Google Scholar 

  15. D. S. Reddy, J. Mod. Phys. 2, 113 (2011).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, International Islamic University, Kuala Lumpur, 53100, Malaysia

    Sabuhi Ganiyev, M. Azim Khairi, D. Ahmad Fauzi & N. F. Hasbullah

  2. Industrial Technology Division, Agency Nuclear Malaysia, Kuala Lumpur, 43000, Malaysia

    Yusof Abdullah

Authors
  1. Sabuhi Ganiyev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Azim Khairi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. Ahmad Fauzi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yusof Abdullah
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. N. F. Hasbullah
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. F. Hasbullah.

Additional information

The article is published in the original.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ganiyev, S., Azim Khairi, M., Ahmad Fauzi, D. et al. The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode. Semiconductors 51, 1666–1670 (2017). https://doi.org/10.1134/S1063782617120077

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782617120077

Search

Navigation