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Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer

  • XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015
  • Published:
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Abstract

The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained. A steady increase in the degree of electroluminescence circular polarization and in the Curie temperature of the ferromagnetic structure with increasing hole concentration is observed, and a change in sign of the degree of circular polarization under variations in the Mn content is revealed. The data are interpreted on the basis of well-known models of ferromagnetism in structures based on ferromagnetic semiconductors.

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References

  1. N. Dai, H. Luo, F. C. Zhang, N. Samarth, M. Dobrowolska, and J. K. Furdyna, Phys. Rev. Lett. 67, 3824 (1991).

    Article  ADS  Google Scholar 

  2. I. A. Buyanova, G. Yu. Rudko, W. M. Chen, A. A. Toropov, S. V. Sorokin, S. V. Ivanov, and P. S. Kop’ev, Appl. Phys. Lett. 82, 1700 (2003).

    Article  ADS  Google Scholar 

  3. R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev. B 69, 161305(R) (2004).

    Article  ADS  Google Scholar 

  4. M. V. Dorokhin, Yu. A. Danilov, P. B. Demina, V. D. Kulakovskii, O. V. Vikhrova, S. V. Zaitsev, and B. N. Zvonkov, J. Phys. D: Appl. Phys. 41, 24 (2008).

    Article  Google Scholar 

  5. V. L. Korenev, JETP Lett. 78, 564 (2003).

    Article  ADS  Google Scholar 

  6. O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, B. N. Zvonkov, I. L. Kalent’eva, and A. V. Kudrin, Tech. Phys. Lett. 35, 643 (2009).

    Article  ADS  Google Scholar 

  7. M. V. Dorokhin, S. V. Zaitsev, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskii, M. M. Prokof’eva, and A. E. Sholina, Phys. Solid State 52, 2291 (2010).

    Article  ADS  Google Scholar 

  8. T. Hartmann, S. Ye, P. J. Klar, W. Heimbrodt, M. Lampalzer, W. Stolz, T. Kurz, A. Loidl, H.-A. Krug von Nidda, D. Wolverson, J. J. Davies, and H. Overhof, Phys. Rev. B 70, 233201 (2004).

    Article  ADS  Google Scholar 

  9. F. Matsukura, H. Ohno, and T. Dietl, III–V Ferromagnetic Semiconductors, Vol. 14 of Handbook of Magnetic Materials, Ed. by K. H. J. Buschow (Elsevier, 2002), Vol. 1, p. 1.

    Google Scholar 

  10. Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Diet, and H. Ohno, Phys. Rev. B 81, 045208 (2010).

    Article  ADS  Google Scholar 

  11. S. V. Zaitsev, M. V. Dorokhin, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, and V. D. Kulakovskii, JETP Lett. 90, 658 (2009).

    Article  ADS  Google Scholar 

  12. I. V. Rozhansky, N. S. Averkiev, I. V. Krainov, and E. Laehderanta, Phys. Status Solidi A 211, 1048 (2014).

    Article  ADS  Google Scholar 

  13. B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, E. S. Demidov, P. B. Demina, M. V. Dorokhin, Yu. N. Drozdov, V. V. Podol’skii, and M. V. Sapozhnikov, J. Opt. Technol. 75, 389 (2008).

    Article  Google Scholar 

  14. K. M. Yu, W. Walukiewicz, T. Wojtowicz, I. Kuryliszyn, X. Liu, Y. Sasaki, and J. K. Furdyna, Phys. Rev. B 65, 201303(R) (2002).

    Article  ADS  Google Scholar 

  15. J. Blinowski and P. Kacman, Phys. Rev. B 67, 121204(R) (2003).

    Article  ADS  Google Scholar 

  16. T. Jungwirth, J. Sinova, J. Masek, J. Kucera, and A. H. MacDonald, Rev. Mod. Phys. 78, 822 (2006).

    Article  ADS  Google Scholar 

  17. D. K. Young, J. A. Gupta, E. Johnston-Halperin, R. Epstein, Y. Kato, and D. D. Awschalom, Semicond. Sci. Technol. 17, 275 (2002).

    Article  ADS  Google Scholar 

  18. U. Bockelmann, W. Heller, and G. Abstreiter, Phys. Rev. B 55, 4469 (1997).

    Article  ADS  Google Scholar 

  19. A. O. Govorov and A. V. Kalameitsev, Phys. Rev. B 71, 035338 (2005).

    Article  ADS  Google Scholar 

  20. T. Jungwirth, K. Y. Wang, J. Mašek, K. W. Edmonds, J. König, J. Sinova, M. Polini, N. A. Goncharuk, A. H. MacDonald, M. Sawicki, A. W. Rushfoth, R. D. Campion, L. X. Zgao, C. T. Foxon, and B. L. Gallagher, Phys. Rev. B 72, 165204 (2005).

    Article  ADS  Google Scholar 

  21. Y. Nishitani, D. Chiba, M. Endo, M. Sawicki, F. Matsukura, T. Dietl, and H. Ohno, Phys. Rev. B 81, 045208 (2010).

    Article  ADS  Google Scholar 

  22. Th. Hartmann, S. Ye, P. J. Klar, W. Heimbrodt, M. Lampalzer, W. Stolz, T. Kurz, A. Loidl, H.-A. Krug von Nidda, D. Wolverson, J. J. Davies, and H. Overhof, Phys. Rev. B 70, 233201 (2004.

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Research Physical–Technical Institute, Nizhny Novgorod State University, Nizhny Novgorod, 603950, Russia

    A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova & A. V. Zdoroveishev

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  1. A. V. Rykov
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  2. M. V. Dorokhin
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  3. E. I. Malysheva
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  4. P. B. Demina
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  5. O. V. Vikhrova
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  6. A. V. Zdoroveishev
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Correspondence to A. V. Rykov.

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Original Russian Text © A.V. Rykov, M.V. Dorokhin, E.I. Malysheva, P.B. Demina, O.V. Vikhrova, A.V. Zdoroveishev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 1, pp. 3–8.

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Rykov, A.V., Dorokhin, M.V., Malysheva, E.I. et al. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer. Semiconductors 50, 1–7 (2016). https://doi.org/10.1134/S106378261601019X

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  • DOI: https://doi.org/10.1134/S106378261601019X

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