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Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem containing insulating Al2O3 quantum dots is substantially increased (by nearly two orders of magnitude) compared to the exciton binding energy in an Al2O3 single crystal. It is established that, in the band gap of an Al2O3 nanoparticle, a band of exciton states (formed from spatially separated electrons and holes) appears. It is shown that there exists the possibility of experimentally detecting the ground and excited exciton states in the band gap of Al2O3 nanoparticles at room temperature from the absorption spectrum of the nanosystem.

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References

  1. Yu. N. Kulchin, A. V. Shcherbakov, and V. P. Dzyuba, Quantum Electron. 38, 154 (2008).

    Article  Google Scholar 

  2. V. P. Dzyuba, Yu. N. Kulchin, and V. A. Milichko, J. Nanopart. Res. 14, 1208 (2012).

    Article  Google Scholar 

  3. Yu. N. Kulchin, V. P. Dzyuba, and V. A. Milichko, Adv. Mater. Res. A 677, 36 (2013).

    Article  Google Scholar 

  4. Yu. N. Kulchin, V. P. Dzyuba, and V. A. Milichko, Adv. Mater. Res. A 677, 42 (2013).

    Article  Google Scholar 

  5. V. P. Dzyuba, Yu. N. Kulchin, and S. I. Pokutnyi, Optics 3 (6-1), 22 (2014).

    Google Scholar 

  6. Zh. I. Alferov, Rev. Mod. Phys. 73, 767 (2001).

    Article  ADS  Google Scholar 

  7. S. I. Pokutnyi, Phys. Lett. A 342, 347 (2005).

    Article  ADS  Google Scholar 

  8. S. I. Pokutnyi, Semiconductors 47, 791 (2013).

    Article  ADS  Google Scholar 

  9. S. I. Pokutnyi, Tech. Phys. Lett. 39, 233 (2013).

    Article  ADS  Google Scholar 

  10. V. L. Ginzburg and V. V. Kelle, JETP Lett. 17, 306 (1973).

    ADS  Google Scholar 

  11. Yu. E. Lozovik and V. N. Nishanov, Sov. Phys. Solid State 18, 1905 (1976).

    Google Scholar 

  12. S. I. Pokutnyi, Phys. Lett. A 203, 388 (1995).

    Article  ADS  Google Scholar 

  13. L. V. Keldysh, JETP Lett. 29, 704 (1979).

    Google Scholar 

  14. O. P. Mikheeva and A. I. Sidorov, Tech. Phys. 49, 739 (2004).

    Article  Google Scholar 

Download references

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Correspondence to S. I. Pokutnyi.

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Original Russian Text © S.I. Pokutnyi, Yu.N. Kulchin, V.P. Dzyuba, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 10, pp. 1355–1359.

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Pokutnyi, S.I., Kulchin, Y.N. & Dzyuba, V.P. Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots. Semiconductors 49, 1311–1315 (2015). https://doi.org/10.1134/S1063782615100218

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  • DOI: https://doi.org/10.1134/S1063782615100218

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