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Admittance spectroscopy of solar cells based on GaPNAs layers

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Admittance spectroscopy is used to study defect levels in the layers of a GaPNAs quaternary solid solution. Centers with an activation energy of 0.22 eV and a capture cross section of ∼2.4 × 10−15 cm2 are found in doped n-GaPNAs layers grown on GaP substrates. These centers correspond to already known SiGa + V P defects in n-GaP; annealing decreases their concentration by several times. A level with an activation energy of 0.23–0.24 eV and capture cross section of ∼9.0 × 10−20 cm2 is found in undoped GaPNAs layers grown on Si and GaP substrates. The concentration of these centers substantially decreases upon annealing, and, at annealing temperatures exceeding 600°C, there is absolutely no response from these defects. For undoped GaPNAs layers grown on GaP substrates, a level with an activation energy of 0.18 eV and capture cross section of ∼1.1 × 10−16 cm2 is also found. The concentration of these centers remains unchanged upon annealing.

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Correspondence to A. I. Baranov.

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Original Russian Text © A.I. Baranov, A.S. Gudovskikh, K.S. Zelentsov, E.V. Nikitina, A.Yu. Egorov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 4, pp. 534–538.

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Baranov, A.I., Gudovskikh, A.S., Zelentsov, K.S. et al. Admittance spectroscopy of solar cells based on GaPNAs layers. Semiconductors 49, 524–528 (2015).

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