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Study of GaInP solar-cell interfaces by variable-flux spectral measurements

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Abstract

The band structure and interface properties of solar cells based on GaInP/AlInP heterostructures are studied. The effect of band-structure variation at the interface between the p-AlInP wide-gap window and the p-GaInP emitter under the action of incident light is demonstrated. This effect results in the dependence of the spectral characteristics of GaInP solar cells on the irradiation intensity. A new procedure based on this effect is developed for estimating the minority carrier lifetime in the p-GaInP emitter layer and the density of surface states at the wide-gap window/emitter (p-AlInP/p-GaInP) interface. It is shown that the density of surface states at the p-AlInP/p-GaInP interface is within the range 109–1011 cm−2 eV−1.

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Correspondence to I. A. Morozov.

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Original Russian Text © I.A. Morozov, A.S. Gudovskikh, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 4, pp. 475–480.

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Morozov, I.A., Gudovskikh, A.S. Study of GaInP solar-cell interfaces by variable-flux spectral measurements. Semiconductors 48, 459–464 (2014). https://doi.org/10.1134/S1063782614040216

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  • DOI: https://doi.org/10.1134/S1063782614040216

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