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Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation

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The designs of two- and three-junction solar cells based on GaPNAs/Si lattice-matched hetero-structures are calculated. It is shown that the efficiency of two-junction solar cells constituted by a junction based on a GaPNAs solid solution with a band gap E g of 1.78 eV and a junction based on Si may reach a value of 30.3% under AM1.5 D, 100 mW/cm2, and 35.4% under AM1.5D, 20 W/cm2. The maximum values of the efficiency of the three-junction solar cell constituted by top and middle junctions based on GaPNAs with E g of 2 and 1.5 eV, respectively, and a Si-based bottom junction are 39.2% under AM1.5 D, 100 mW/cm2, and 44.5% under AM1.5D, 20 W/cm2. It is shown that the thickness and minority carrier lifetime of the photoactive layers affect the efficiency of solar-light conversion by the heterostructures being developed.

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Correspondence to D. A. Kudryashov.

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Original Russian Text © D.A. Kudryashov, A.S. Gudovskikh, E.V. Nikitina, A.Yu. Egorov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 3, pp. 396–401.

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Kudryashov, D.A., Gudovskikh, A.S., Nikitina, E.V. et al. Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation. Semiconductors 48, 381–386 (2014).

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