Properties of solar cells based on a-Si:H p-i-n structures are studied by admittance spectroscopy. The responses of the density of states in the (i)a-Si:H layers and a-SiC:H layers in the p-type region of the structure are distinguished in the admittance spectra. The density of states in the middle of the mobility gap for (i)a-Si:H is estimated to be 5 × 1016 cm−3 eV−1. It is shown that this value increases during the course of photoinduced degradation to ∼1017 cm−3 eV−1. For the wide-gap a-SiC:H layers, the observed response of the density of states in the valence-band tails made it possible to estimate the lower bound for the density of states at the Fermi level (1018 cm−3 eV−1) and to find the Fermi level position to be 0.4 eV above the valenceband edge. The suggested procedure can be used to optimize the design of solar cells in order to improve their efficiency.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Price excludes VAT (USA)
Tax calculation will be finalised during checkout.
C. R. Wronski, S. Lee, M. Hicks, and S. Kumar, Phys. Rev. Lett. 63, 1420 (1989).
A. Madan and M. Shaw, The Physics and Applications of Amorphous Semiconductors (Academic, Boston, 1988; Mir, Moscow, 1991).
H. G. Grimmeiss and L. A. Ledebo, J. Appl. Phys. 46, 2155 (1975).
M. Vaněček, A. Abrahám, O. Štika, J. Stuchlík, and J. Kočka, Phys. Status Solidi A 83, 617 (1984).
R. Bruggemann and J. P. Kleider, Thin Solid Films 403–404, 30 (2002).
D. L. Losee, J. Appl. Phys. 46, 2204 (1975).
D. V. Lang, J. D. Cohen, and J. P. Harbison, Phys. Rev. B 25, 5285 (1982).
J. P. Kleider, Thin Solid Films 427, 127 (2003).
R. Stangl, M. Kriegel, and M. Schmidt, in Proceedings of the 4th World Conference on Photovoltaic Energy Conversion IEEE (Hawaii, USA, 2006), p. 1350.
Y. Poissant, P. Chatterjee, and P. Roca i Cabarrocas, J. Appl. Phys. 94, 7305 (2003).
A. S. Gudovskikh, J. P. Kleider, R. Chouffot, N. A. Kalyuzhnyy, S. A. Mintairov, and V. M. Lantratov, J. Phys. D: Appl. Phys. 42, 165307 (2009).
X. D. Liu, E. Y. Jiang, and Z. Q. Li, J. Appl. Phys. 102, 073708 (2007).
Original Russian Text © A.S. Gudovskikh, A.S. Abramov, A.V. Bobyl, V.N. Verbitskiy, K.S. Zelentsov, E.M. Ershenko, D.A. Kudryashov, S.A. Kudryashov, A.O. Monastyrenko, A.R. Terra, E.I. Terukov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 8, pp. 1094–1101.
About this article
Cite this article
Gudovskikh, A.S., Abramov, A.S., Bobyl, A.V. et al. Study of the properties of solar cells based on a-Si:H p-i-n structures by admittance spectroscopy. Semiconductors 47, 1090–1096 (2013). https://doi.org/10.1134/S106378261308006X