Abstract
The processes of the noncatalytic synthesis of structures with CdTe nanowires by magnetron sputtering deposition are studied. It is shown that the deposition of magnetron sputtered CdTe onto substrates covered by a porous SiO2 layer can result in CdTe nanowires formation. The porosity of SiO2 layers with thicknesses from 2 to 15 nm fabricated by magnetron sputtering deposition is estimated.
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References
Zh. I. Alferov, V. M. Andreev, and V. D. Rumyantsev, Semiconductors 38, 899 (2004).
CdTe and Related Compounds; Physics, Defects, Hetero and Nano-Structures, Crystal Growth, Surfaces and Applications, Ed. by R. Triboulet and P. Siffert (Elsevier, Amsterdam, 2010).
Semiconductor Nanomaterials for Flexible Technologies: From Photovoltaics and Electronics to Sensors and Energy Storage, Ed. by Y. Sun and J. A. Rogers (Elsevier, Amsterdam, 2010).
C. H. Henry, J. Appl. Phys. 51, 4494 (1980).
L. L. Kazmerski, Efficiencies determined by certified agencies/laboratories National Renewable Energy Laboratory (NREL) (Golden, CO, 2012).
17.3 Percent Efficiency Confirmed by NREL (Business Wire, 2011).
P. J. Pauzauskie and P. Yang, Mater. Today 9(10), 36 (2006).
J. A. Czaban, D. A. Thompson, and R. R. la Pierre, Nano Lett. 9, 148 (2009).
G. E. Cirlin, A. D. Bouravleuv, I. P. Soshnikov, Yu. B. Samsonenko, V. G. Dubrovskii, E. M. Arakcheeva, E. M. Tanklevskaya, and P. Werner, Nanoscale Res. Lett. 5, 360 (2009).
B. M. Kayes, H. A. Atwater, and N. S. Lewis, J. Appl. Phys. 97, 114302 (2005).
K.-Q. Peng and S.-T. Lee, Adv. Mater. 23, 198 (2011).
R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4(5), 89 (1964).
E. I. Givargizov and A. A. Chernov, Sov. Phys. Crystallogr. 18, 89 (1973).
E. I. Givargizov and A. A. Chernov, Sov. Phys. Crystallogr. 18, 89 (1973).
V. G. Dubrovskii, G. E. Cirlin, I. P. Soshnikov, A. A. Tonkikh, N. V. Sibirev, Yu. B. Samsonenko, and V. M. Ustinov, Phys. Rev. B 71, 205325 (2005).
I. P. Soshnikov, Tech. Phys. Lett. 31, 644 (2005).
S. Neretina, R. A. Hughes, J. F. Britten, N. V. Sochinskii, J. S. Preston, and P. Mascher, Nanotechnology 18, 275301 (2007).
P. Liu, V. P. Singh, C. A Jarro, and S. Rajaputra, Nanotechnology 22, 145304 (2011).
V. Consonni, G. Rey, J. Bonaimé, N. Karst, B. Doisneau, H. Roussel, S. Renet, and D. Bellet, Appl. Phys. Lett. 98, 111906 (2011).
A. A. Al-Ghamdi, M. S. Abd El-sadek, A. T. Nagat, and F. El-Tantawy, Solid State Commun. 152, 1644 (2012).
R. D. Gould and C. J. Bowler, Thin Solid Films 164, 281 (1988).
W. Huber and A. Lopez-Otero, Thin Solid Films 58, 21 (1979).
J. D. Major and K. Durose, Sol. Energy Mater. Solar Cells 95, 3165 (2011).
T. L. Chu and S. S. Chu, Solid State Electron. 38, 533 (1995).
I. Mora-Seró, R. Tena-Zaera, J. González, and V. Muñoz-Sanjosé, J. Cryst. Growth 262, 19 (2004).
R. G. Dhere, M. Bonnet-Eymard, E. Charlet, E. Peter, J. N. Duenow, J. V. Li, D. Kuciauskas, and T. A. Gessert, Thin Solid Films 519, 7142 (2011).
J. Schaffner, M. Motzko, A. Tueschen, A. Swirschuk, H.-J. Schimper, A. Klein, T. Modes, O. Zywitzki, and W. Jaegermann, J. Appl. Phys. 110, 064508 (2011).
W. Wang, G. Zhang, and X. Li, Chem. Lett. 37, 848 (2008).
R. H. Bube, in Encyclopedia of Materials: Science and Technology (Elsevier, 2001), p. 873.
T. Ohgai, L. Gravier, X. Hoffer, and J.-P. Ansermet, J. Appl. Electrochem. 35, 479 (2005).
Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan, Adv. Mater. 15, 353 (2003).
X. Jin, M. Kruszynska, J. Parisi, and J. Kolny-Olesiak, Nano Res. 4, 824 (2011).
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Original Russian Text © I.P. Soshnikov, V.A. Petrov, Y.Y. Proskuryakov, D.A. Kudryashov, A.V. Nashchekin, G.E. Cirlin, R. Treharne, K. Durose, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 7, pp. 865–868.
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Soshnikov, I.P., Petrov, V.A., Proskuryakov, Y.Y. et al. Formation of structures with noncatalytic CdTe nanowires. Semiconductors 47, 875–878 (2013). https://doi.org/10.1134/S1063782613070221
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DOI: https://doi.org/10.1134/S1063782613070221