Skip to main content
SpringerLink
Log in

Dark-current relaxation in MnGa2Se4 single crystals

  • Electronic Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The results of investigation of isothermal currents and charge accumulation in In-MnGa2Se4-In sandwich structures are presented. The obtained data are analyzed on the basis of the theory of isothermal currents and the relay-race mechanism of charge transport. It is shown that the dark-current relaxation in MnGa2Se4 single crystals is associated with charge accumulation at deep levels due to injection from the cathode. The following parameters are determined: the contact capacitance C k = 2 × 10−13 F, the charge-accumulation-layer thickness d k = 4 × 10−6 cm, and the drift charge-carrier mobility μch = 3 × 10−8 cm2 V−1 s−1 in MnGa2Se4 single crystals.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Ya. Vul’ and A. Ya. Shik, Sov. Phys. Semicond. 8, 1264 (1974).

    Google Scholar 

  2. V. I. Arkhipov, Yu. A. Popov, and A. I. Rudenko, Sov. Phys. Semicond. 17, 1159 (1989).

    Google Scholar 

  3. B. L. Timman, Sov. Phys. Semicond. 7, 163 (1973).

    Google Scholar 

  4. B. L. Timman and A. P. Karpova, Sov. Phys. Semicond. 7, 167 (1973).

    Google Scholar 

  5. R. A. Suris and B. I. Fuks, Sov. Phys. Semicond. 14, 896 (1980).

    Google Scholar 

  6. J. G. Simmons and G. W. Taylor, Phys. Rev. B 5, 1619 (1972).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Az-1143, Azerbaijan

    O. V. Tagiev & S. G. Asadullayeva

  2. Baku Branch, Lomonosov Moscow State University, Baku, Az-1143, Azerbaijan

    O. V. Tagiev

  3. Institute of Chemistry, National Academy of Sciences of Azerbaijan, Baku, Az-1143, Azerbaijan

    I. B. Bachtiyarly & K. O. Tagiev

Authors
  1. O. V. Tagiev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. G. Asadullayeva
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. B. Bachtiyarly
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. O. Tagiev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to O. V. Tagiev.

Additional information

Original Russian Text © O.V. Tagiev, S.G. Asadullayeva, I.B. Bachtiyarly, K.O. Tagiev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 5, pp. 577–579.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tagiev, O.V., Asadullayeva, S.G., Bachtiyarly, I.B. et al. Dark-current relaxation in MnGa2Se4 single crystals. Semiconductors 47, 593–595 (2013). https://doi.org/10.1134/S1063782613050205

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782613050205

Keywords

Search

Navigation