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Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

Abstract

The current-voltage characteristics of MIS (metal-insulator-semiconductor) structures with insulators based on silicon oxide, fabricated by low-frequency (55 kHz) plasma-enhanced chemical vapor deposition are studied. A specific feature of the used insulators is that there are inclusions of particles of other materials with narrower band gaps present. It is found that such structures possess the property of bipolar conductivity switching. The MIS structures with a multilayer insulator containing additional nanoscale siliconnitride layers exhibit the best characteristics of the conductivity switching effect.

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Correspondence to A. E. Berdnikov.

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Original Russian Text © A.E. Berdnikov, V.N. Gusev, A.A. Mironenko, A.A. Popov, A.V. Perminov, A.C. Rudy, V.D. Chernomordick, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 5, pp. 626–632.

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Berdnikov, A.E., Gusev, V.N., Mironenko, A.A. et al. Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods. Semiconductors 47, 641–646 (2013). https://doi.org/10.1134/S1063782613050072

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Keywords

  • Silicon Nitride
  • Double Barrier
  • Silicon Excess
  • Silicon Nitride Layer
  • Phase Change Random Access Memory