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Electrical properties of semiconductor quantum dots

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

A method, which makes it possible to obtain semiconductor particles V ≈ 10−20 cm3 in volume (quantum dots) with a concentration of up to 1011 cm−2 and electrical contacts to each of them, is suggested. High variability in the electrical properties of such particles from a metal oxide (CuO or NiO) after the chemisorption of gas molecules is found.

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Authors and Affiliations

  1. Educational-Research-Production Complex, State University, Orel, 302020, Russia

    V. F. Kharlamov, D. A. Korostelev, I. G. Bogoraz, O. A. Milovidova & V. O. Sergeyev

Authors
  1. V. F. Kharlamov
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  2. D. A. Korostelev
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  3. I. G. Bogoraz
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  4. O. A. Milovidova
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  5. V. O. Sergeyev
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Corresponding author

Correspondence to V. F. Kharlamov.

Additional information

Original Russian Text © V.F. Kharlamov, D.A. Korostelev, I.G. Bogoraz, O.A. Milovidova, V.O. Sergeyev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 4, pp. 473–479.

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Kharlamov, V.F., Korostelev, D.A., Bogoraz, I.G. et al. Electrical properties of semiconductor quantum dots. Semiconductors 47, 494–500 (2013). https://doi.org/10.1134/S1063782613040131

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  • DOI: https://doi.org/10.1134/S1063782613040131

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