Skip to main content

Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure

Abstract

The temperature dependence (20-200°C) of the electrical and electroluminescent properties of a flip-chip light-emitting diode (LED) based on an InAs/InAsSbP heterostructure (λ ≈ 3.37 μm) has been studied. It is shown that the charge transport through the LED is governed by the tunneling-recombination (at a forward bias) and diffusion (at a reverse bias) mechanisms. The peak of the emission spectrum is due to the band-to-band recombination. As the LED is heated, the emission spectrum shifts to longer wavelengths because of the decrease in the energy gap of gallium arsenide. The emission power superexponentially decreases with increasing temperature, which is mainly due to a rise in the Auger recombination rate.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    A. P. Astakhova, A. S. Golovin, N. D. Il’inskaya, K. V. Kalinina, S. S. Kizhaev, O. Yu. Serebrennikova, N. D. Stoyanov, Zs. J. Horvath, and Yu. P. Yakovlev, Semiconductors 44, 263 (2010).

    Article  ADS  Google Scholar 

  2. 2.

    V. V. Pasynkov and L. K. Chirkin, Semiconductor Devices (Vyssh. Shkola, Moscow, 1987) [in Russian].

    Google Scholar 

  3. 3.

    B. L. Sharma and R. K. Purokhit, Semiconductor Heterojunctions (Ahademiai Kiado, Budapest, 1971; Sov. Radio, Moscow, 1979).

    Google Scholar 

  4. 4.

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, Semiconductors 35, 1369 (2001).

    Article  ADS  Google Scholar 

  5. 5.

    M. P. Mikhailova, Handbook Series on Semiconductor Parameters, Ed. by M. Levinshtein, S. Rumyantsev, and M. Shur (World Scientific, London, 1999).

    Google Scholar 

  6. 6.

    V. N. Abakumov, V. I. Perel’, and I. N. Yasievich, Nonradiative Recombination in Semiconductors (Peterb. Inst. Yad. Fiz. Ross. Akad. Nauk, St.-Petersburg, 1997) [in Russian].

    Google Scholar 

  7. 7.

    N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, A. N. Imenkov, and Yu. P. Yakovlev, Semiconductors 37, 971 (2003).

    Article  ADS  Google Scholar 

  8. 8.

    B. L. Gel’mont, Z. N. Sokolova, and I. N. Yassievich, Sov. Phys. Semicond. 16, 382 (1982).

    Google Scholar 

  9. 9.

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, Semiconductors 35, 598 (2001).

    Article  ADS  Google Scholar 

  10. 10.

    T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov, and Yu. P. Yakovlev, Semiconductors 39, 1235 (2005).

    Article  ADS  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to A. A. Petuhov.

Additional information

Original Russian Text © A.A. Petuhov, N.D. Il’inskaya, S.S. Kizhaev, N.D. Stoyanov, Yu.P. Yakovlev, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1560–1563.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Petuhov, A.A., Il’inskaya, N.D., Kizhaev, S.S. et al. Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure. Semiconductors 45, 1501–1504 (2011). https://doi.org/10.1134/S1063782611110200

Download citation

Keywords

  • Light Emit Diode
  • Gallium Arsenide
  • Emission Power
  • Flip Chip
  • Charge Transport Mechanism