The temperature dependence (20-200°C) of the electrical and electroluminescent properties of a flip-chip light-emitting diode (LED) based on an InAs/InAsSbP heterostructure (λ ≈ 3.37 μm) has been studied. It is shown that the charge transport through the LED is governed by the tunneling-recombination (at a forward bias) and diffusion (at a reverse bias) mechanisms. The peak of the emission spectrum is due to the band-to-band recombination. As the LED is heated, the emission spectrum shifts to longer wavelengths because of the decrease in the energy gap of gallium arsenide. The emission power superexponentially decreases with increasing temperature, which is mainly due to a rise in the Auger recombination rate.
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Original Russian Text © A.A. Petuhov, N.D. Il’inskaya, S.S. Kizhaev, N.D. Stoyanov, Yu.P. Yakovlev, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 11, pp. 1560–1563.
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Petuhov, A.A., Il’inskaya, N.D., Kizhaev, S.S. et al. Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure. Semiconductors 45, 1501–1504 (2011). https://doi.org/10.1134/S1063782611110200
- Light Emit Diode
- Gallium Arsenide
- Emission Power
- Flip Chip
- Charge Transport Mechanism