The effect of the properties of interfaces with Group-III phosphides on characteristics of GaInP solar cells has been studied. It is shown that the large valence band offset at the p-GaAs/p-AlInP interface imposes fundamental limitations on the use of p-AlInP layers as a wide-band-gap window in p-n structures of solar cells operating at ratios of high solar light concentration. It is demonstrated that characteristics of p-n solar cells can be, in principle, improved by using a double-layer wide-band-gap window constituted by p-Al0.8Ga0.2As and p-(Al0.6Ga0.4)0.51In0.49P layers.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Price excludes VAT (USA)
Tax calculation will be finalised during checkout.
R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, D. D. Krut, J. H. Ermer, R. A. Sherif, and N. H. Karam, in Proc. of the 4th Intern. Conf. Solar Concentrators (El Escorial, Spain, 2007).
S. R. Kurtz, J. M. Olson, D. J. Friedman, J. F. Geisz, K. A. Bertness, and A. E. Kibbler, in Proc. of the Compound Semiconductor Surface Passivation and Novel Device Processing Symp., Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. J. Pearton (Mater. Res. Soc., Warrendale, 1999), p. 95.
S. I. Wojtczuk, S. M. Vernon, and M. M. Sanfacon, in Proc. of the 23th IEEE Photovoltaic Specialists Conf. (1993), p. 655.
A. S. Gudovskikh, N. A. Kaluzhniy, V. M. Lantranov, S. A. Mintairov, M. Z. Shvarts, and V. M. Andreev, Thin Sol. Films 516, 6739 (2008).
M. Z. Shvarts, P. Y. Gazaryan, N. A. Kaluzhniy, V. P. Khvostikov, V. M. Lantranov, S. A. Mintairov, S. V. Sorokina, and N. K. Timoshina, in Proc. of the 21th Eur. Photovoltaic Solar Energy Conf. (Dresden, 2006).
V. M. Lantratov, N. A. Kalyuzhnyĭ, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, and V. M. Andreev, Fiz. Tekh. Poluprovodn. 41, 751 (2007) [Semiconductors 41, 727 (2007)].
R. Stangl, M. Kriegel, and M. Schmidt, in Proc. of the 4th World Conf. Photovoltaic Energy Conversion, WCPEC-4 (Hawaii, USA, 2006).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
D. P. Bour, J. R. Shealy, G. W. Wicks, and W. J. Schaff, Appl. Phys. Lett. 50, 615 (1987).
C.-S. Jiang, D. J. Friedman, H. R. Moutinho, and M. M. Al-Jassim, in Proc. of the IEEE 4th World Conf. on Photovoltaic Energy Conversion, 2006 (Waikoloa, Hawaii, 2006), p. 853.
S. Adachi, J. Appl. Phys. 58, R1 (1985).
T. Shitara and K. Eberl, Appl. Phys. Lett. 65, 356 (1994).
M. Ikeda and K. Kaneko, J. Appl. Phys. 66, 5285 (1989).
D. C. Look, D. K. Lorance, J. R. Sizelove, C. E. Stutz, K. R. Evans, and D. W. Whitson, J. Appl. Phys. 71, 260 (1992).
M.-J. Yang, M. Yamaguchi, T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, Sol. Energy Mater. Solar Cells 45, 331 (1997).
Original Russian Text © A.S. Gudovskikh, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, M.Z. Shvarts, V.M. Andreev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 10, pp. 1403–1408.
About this article
Cite this article
Gudovskikh, A.S., Kalyuzhnyy, N.A., Lantratov, V.M. et al. Properties of interfaces in GaInP solar cells. Semiconductors 43, 1363–1368 (2009). https://doi.org/10.1134/S1063782609100194