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Properties of interfaces in GaInP solar cells

Abstract

The effect of the properties of interfaces with Group-III phosphides on characteristics of GaInP solar cells has been studied. It is shown that the large valence band offset at the p-GaAs/p-AlInP interface imposes fundamental limitations on the use of p-AlInP layers as a wide-band-gap window in p-n structures of solar cells operating at ratios of high solar light concentration. It is demonstrated that characteristics of p-n solar cells can be, in principle, improved by using a double-layer wide-band-gap window constituted by p-Al0.8Ga0.2As and p-(Al0.6Ga0.4)0.51In0.49P layers.

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Correspondence to A. S. Gudovskikh.

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Original Russian Text © A.S. Gudovskikh, N.A. Kalyuzhnyy, V.M. Lantratov, S.A. Mintairov, M.Z. Shvarts, V.M. Andreev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 10, pp. 1403–1408.

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Gudovskikh, A.S., Kalyuzhnyy, N.A., Lantratov, V.M. et al. Properties of interfaces in GaInP solar cells. Semiconductors 43, 1363–1368 (2009). https://doi.org/10.1134/S1063782609100194

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  • DOI: https://doi.org/10.1134/S1063782609100194

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