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Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics

Abstract

A method is suggested for determining the charge transport mechanism in p-n junctions by analyzing the temperature dependence of forward current-voltage characteristics at a low injection level. The method has been experimentally tested with Si:Au diodes, green GaP LEDs, and blue AlGaN/InGaN/GaN LEDS with a quantum well.

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Correspondence to A. V. Lakalin.

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Original Russian Text © N.S. Grushko, A.V. Lakalin, A.I. Somov, 2008, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2008, Vol. 42, No. 13.

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Grushko, N.S., Lakalin, A.V. & Somov, A.I. Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics. Semiconductors 42, 1532–1535 (2008). https://doi.org/10.1134/S1063782608130174

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  • DOI: https://doi.org/10.1134/S1063782608130174

PACS numbers

  • 72.20.Jv
  • 73.40.Lq