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A study of the transport of charge carriers in coupled quantum regions

Semiconductors volume 42, pages 1462–1468 (2008)Cite this article

Abstract

Specific features of controlled relocation of charge carriers in nanostructures based on tunnelingcoupled quantum regions formed by GaAs/AlGaAs heterojunctions are considered. The results of numerical simulation of dynamics of controlled tunneling relocation of the maximum in the amplitudes of wave functions of charge carriers are discussed.

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Authors and Affiliations

  1. Southern Scientific Center, Russian Academy of Sciences, Moscow, Russia

    B. G. Konoplev

  2. Technological Institute, Southern Federal University, Taganrog, 347928, Russia

    E. A. Ryndin

Authors
  1. B. G. Konoplev
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  2. E. A. Ryndin
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Corresponding author

Correspondence to E. A. Ryndin.

Additional information

Original Russian Text © B.G. Konoplev, E.A. Ryndin, 2008, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2008, Vol. 42, No. 13.

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Konoplev, B.G., Ryndin, E.A. A study of the transport of charge carriers in coupled quantum regions. Semiconductors 42, 1462–1468 (2008). https://doi.org/10.1134/S1063782608130022

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  • DOI: https://doi.org/10.1134/S1063782608130022

PACS numbers

  • 73.21.Fg