Abstract
Specific features of controlled relocation of charge carriers in nanostructures based on tunnelingcoupled quantum regions formed by GaAs/AlGaAs heterojunctions are considered. The results of numerical simulation of dynamics of controlled tunneling relocation of the maximum in the amplitudes of wave functions of charge carriers are discussed.
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Original Russian Text © B.G. Konoplev, E.A. Ryndin, 2008, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2008, Vol. 42, No. 13.
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Konoplev, B.G., Ryndin, E.A. A study of the transport of charge carriers in coupled quantum regions. Semiconductors 42, 1462–1468 (2008). https://doi.org/10.1134/S1063782608130022
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DOI: https://doi.org/10.1134/S1063782608130022