Skip to main content

Sources of spontaneous emission based on indium arsenide

Abstract

The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    L. Schnitzer, E. Yablonovitch, C. Caneau, et al., Appl. Phys. Lett. 63, 2174 (1993).

    Article  ADS  Google Scholar 

  2. 2.

    L. Schnitzer, E. Yablonovitch, C. Caneau, and T.J. Gmitter, Appl. Phys. Lett. 62, 131 (1993).

    Article  ADS  Google Scholar 

  3. 3.

    S. D. Smith, J. G. Crowder, and H. R. Hardaway, SPIE 4651, 157 (2002).

    Article  ADS  Google Scholar 

  4. 4.

    N. P. Esina, N. V. Zotova, and D.N. Nasledov, Radiotekh. Élektron. (Moscow) 8, 1602 (1963); N.P. Esina, N.V. Zotova, and D.N. Nasledov, Fiz. Tekh. Poluprovodn. 2, 370 (1968) [Sov. Phys. Semicond. 2, 305 (1968)].

    Google Scholar 

  5. 5.

    J. Melngailis and R. H. Redicker, J. Appl. Phys. 37, 899 (1966).

    Article  ADS  Google Scholar 

  6. 6.

    T. S. Moss, G. J. Burrell, and B. Ellis, Semiconductor Opto-Electronics (Butterworths, London, 1973; Mir, Moscow, 1976).

    Google Scholar 

  7. 7.

    M. J. Kane, G. Braithwaite, M. T. Emeny, et al., Appl. Phys. Lett. 76, 943 (2000).

    Article  ADS  Google Scholar 

  8. 8.

    D. G. Gevaux, A. M. Green, C. C. Philips, et al., IEE Proc.: Optoelectron. 150, 351 (2003).

    Article  Google Scholar 

  9. 9.

    J. R. Dixon and J. M. Ellis, Phys. Rev. 123, 1560 (1961).

    Article  ADS  Google Scholar 

  10. 10.

    M. J. Kane, G. Braithwaite, M. T. Emeny, et al., Mater. Res. Soc. Symp. Proc. 450, 129 (1997).

    Google Scholar 

  11. 11.

    Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17a: Physics of Group IV Elements and III-V Compounds (Springer-Verlag, Berlin, 1987).

    Google Scholar 

  12. 12.

    K. L. Vodopyanov, H. Graener, C. Philips, and T. J. Tate, Phys. Rev. B 46, 13 194 (1992).

    Google Scholar 

  13. 13.

    A. Monakhov, A. Krier, and V. V. Sherstnev, Semicond. Phys. Technol. 19, 480 (2004).

    Article  ADS  Google Scholar 

  14. 14.

    A. Krier, Philos. Trans. R. Soc. London, Ser. A 359, 599 (2001).

    Article  ADS  Google Scholar 

  15. 15.

    A. Krier and V. V. Sherstnev, J. Phys. D: Appl. Phys. 33, 101 (2000).

    Article  ADS  Google Scholar 

  16. 16.

    S. S. Kizhaev, N. V. Zotova, S. S. Molchanov, and Yu. P. Yakovlev, IEE Proc.: Optoelectron. 140, 36 (2002).

    Article  Google Scholar 

  17. 17.

    V. K. Malyutenko, O. Yu. Malyutenko, and A. V. Zinovchuk, Appl. Phys. Lett. 89, 201114 (2006).

    Google Scholar 

  18. 18.

    A. Krier and X. L. Huang, J. Phys. D: Appl. Phys. 39, 255 (2006).

    Article  ADS  Google Scholar 

  19. 19.

    G. A. Sukach, P. F. Oleksenko, A. B. Bogoslovskaya, et al., Zh. Tekh. Fiz. 67(9), 68 (1997) [Tech. Phys. 67, 1044 (1997)].

    Google Scholar 

  20. 20.

    S. S. Kizhaev, N. V. Zotova, S. S. Molchanov, and Yu. P. Yakovlev, IEE Proc.: Optoelectron. 140, 36 (2002).

    Article  Google Scholar 

  21. 21.

    A. A. Popov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev, Pis’ma Zh. Tekh. Fiz. 23(21), 24 (1997) [Tech. Phys. Lett. 23, 828 (1997)].

    Google Scholar 

  22. 22.

    A. A. Popov, V. V. Sherstnev, Y. P. Yakovlev, et al., Electron. Lett. 33, 86 (1997).

    Article  Google Scholar 

  23. 23.

    A. Krier and V. V. Sherstnev, J. Phys. D: Appl. Phys. 38, 1484 (2003).

    Article  ADS  Google Scholar 

  24. 24.

    E. A. Grebenshchikova, N. V. Zotova, C. C. Kizhaev, et al., Zh. Tekh. Fiz. 71(9), 58 (2001) [Tech. Phys. 71, 1125 (2001)].

    Google Scholar 

  25. 25.

    D. A. Write, V. V. Sherstnev, A. Krier, et al., IEE Proc.: Optoelectron. 150, 314 (2003).

    Article  Google Scholar 

  26. 26.

    A. Krier, H. H. Gao, and V. V. Sherstnev, J. Appl. Phys. 85, 8419 (1999).

    Article  ADS  Google Scholar 

  27. 27.

    X. Y. Gong, T. N. Yamaguchi, H. Kan, et al., Jpn. J. Appl. Phys. 36, 2614 (1997).

    Article  ADS  Google Scholar 

  28. 28.

    N. V. Zotova, C. A. Karandashev, B. A. Matveev, et al., Fiz. Tekh. Poluprovodn. 33, 1010 (1999) [Semiconductors 33, 920 (1999)].

    Google Scholar 

  29. 29.

    J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Moham, Appl. Phys. Lett. 67, 757 (1998).

    Article  ADS  Google Scholar 

  30. 30.

    D. G. Gevaux, A. M. Green, and C. C. Phillips, Appl. Phys. Lett. 79, 4075 (2001).

    Article  ADS  Google Scholar 

  31. 31.

    M. Aĭdaraliev, N. V. Zotov, C. A. Karandashev, and N. M. Stus’, Fiz. Tekh. Poluprovodn. 23, 592 (1989) [Sov. Phys. Semicond. 23, 371 (1989)].

    Google Scholar 

  32. 32.

    M. Pullin, X. Li, J. Heber, et al., SPIE Proc. 3938-33, 144 (2000).

    Article  ADS  Google Scholar 

  33. 33.

    A. Sugimura, J. Appl. Phys. 51, 4405 (1980).

    Article  ADS  Google Scholar 

  34. 34.

    A. Krier, V. V. Sherstnev, H. H. Gao, et al., Appl. Phys. Lett. 80, 2821 (2002).

    Article  ADS  Google Scholar 

  35. 35.

    N. V. Zotova, N. D. Il’inskaya, C. A. Karandashev, et al., Fiz. Tekh. Poluprovodn. 40, 356 (2006) [Semiconductors 40, 351 (2006)].

    Google Scholar 

  36. 36.

    J. R. Dixon and J. M. Ellis, Phys. Rev. 124, 1321 (1961).

    Article  Google Scholar 

  37. 37.

    O. Allaberenov, N. V. Zotova, D. N. Nasledov, and L. D. Neuĭmina, Fiz. Tekh. Poluprovodn. 4, 1939 (1970) [Sov. Phys. Semicond. 4, 1662 (1970)].

    Google Scholar 

  38. 38.

    I. M. Nesmelova, N. C. Baryshev, and B. P. Pyregov, Opt. Spektrosk. 27, 661 (1969).

    Google Scholar 

  39. 39.

    N. V. Zotova, N. D. Il’inskaya, C. A. Karandashev, et al., Fiz. Tekh. Poluprovodn. 40, 1004 (2006) [Semiconductors 40, 977 (2006)].

    Google Scholar 

  40. 40.

    B. A. Matveev, M. Aydaraliev, N. V. Zotova, et al., IEE Proc. Optoelectron. 150, 356 (2003).

    Article  Google Scholar 

  41. 41.

    H. Benistry, H. De Neve, C. Weibuch. IEEE J. Quantum Electron. 3, 1612 (1998).

    Article  ADS  Google Scholar 

  42. 42.

    M. Aidaraliev, N. V. Zotova, N. D. Il’inskaya, et al., Semicond. Sci. Technol. 18, 269 (2003).

    Article  ADS  Google Scholar 

  43. 43.

    N. V. Zotova, N. D. Il’inskaya, C.A. Karandashev, et al., Fiz. Tekh. Poluprovodn. 38, 1270 (2004) [Semiconductors 38, 1230 (2004)].

    Google Scholar 

  44. 44.

    B. Matveev, N. Zotova, N. Il’inskaya, et al., Phys. Status Solidi C 2, 927 (2005).

    Article  ADS  Google Scholar 

  45. 45.

    M. A. Remennyi, B. A. Matveev, N. V. Zotova, et al., Physica E: Low-Dim. Syst. Nanostruct. 20, 548 (2004).

    Article  ADS  Google Scholar 

  46. 46.

    V. K. Malyutenko, O. Yu. Malyutenko, A. D. Podoltsev, et al., Appl. Phys. Lett. 79, 4228 (2001).

    Article  ADS  Google Scholar 

  47. 47.

    B. A. Matveev, N. V. Zotova, N. D. Il’inskaya, et al., J. Mod. Opt. 49, 743 (2002).

    Article  ADS  Google Scholar 

  48. 48.

    M. A. Remennyi, N. V. Zotova, S. A. Karandashov, et al., Sens. Actuators B 91, 256 (2003).

    Article  Google Scholar 

  49. 49.

    B. Matveev, N. Zotova, N. Il’inskaya, Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications, Ed. by L. J. Olafsen, R. M. Biefeld, M. C. Wanke, and A. W. Saxler, Paper 0891-EE01-04.

  50. 50.

    V. Malyutenko, O. Malyutenko, A. Zinovchuk, et al., in Book of Abstracts of the 6th International Conference “Mid-Infrared Optoelectronics Materials and Devices (MIOMD-VI),” St. Petersburg, Russia, 2004.

  51. 51.

    J. P. Van der Ziel, R. S. Logan, R. M. Mikulyak, and A. A. Ballman, IEEE J. Quantum Electron. 21, 1827 (1985).

    Article  ADS  Google Scholar 

  52. 52.

    M. Aĭdaraliev, N. V. Zotova, C. A. Karandashev, et al., Pis’ma Zh. Tekh. Fiz. 13, 563 (1987) [Tech. Phys. Lett. 13, 232 (1987)].

    Google Scholar 

  53. 53.

    N. Kobayashi and Y. Horikoshi, Jpn. J. Appl. Phys. 19, 1641 (1980).

    Article  Google Scholar 

  54. 54.

    Z. G. Yu and Srini Krishnamurthy, J. Opt. Soc. Am. B 23, 2256 (2006).

    Article  Google Scholar 

  55. 55.

    P. P. Paskov, J. Appl. Phys. 81, 1890 (1977).

    Article  ADS  Google Scholar 

  56. 56.

    A. N. Baranov, T. Teissier, D. Barate, et al., in Book of Abstracts of the 6th International Conference “Mid-Infrared Optoelectronics Materials and Devices (MIOMD-VI),” St. Petersburg, Russia, 2004, p. 3.

  57. 57.

    N. P. Esina, N. V. Zotova, I. I. Markov, et al., Zh. Prikl. Spektrosk. 42, 691 (1985).

    Google Scholar 

  58. 58.

    J. Malinen, T. Hannula, N. V. Zotova, in Proceedings of the Conference “Optical Methods for Chemical Process Control,” Boston, 1993, Proc. SPIE 2069, 95 (1993).

    ADS  Google Scholar 

  59. 59.

    V. I. Ivanov-Omskiĭ and B. A. Matveev, Fiz. Tekh. Poluprovodn. 41, 257 (2007) [Semiconductors 41, 247 (2007)].

    Google Scholar 

  60. 60.

    N. C. Das, G. Simonis, J. Bardshaw, et al., Proc. SPIE 5408, 136 (2004).

    Article  ADS  Google Scholar 

  61. 61.

    S. D. Smith, A. Vass, P. Bramley, et al., IEE Proc. Optoelectron. 144(5), 266 (1997).

    Article  Google Scholar 

  62. 62.

    B. A. Matveev, Mid-Infrared Semiconductor Optoelectronics (Springer Ser. Opt. Sci., ISSN 0342-4111, 2006), p. 395.

  63. 63.

    R. C. Johnes, Appl. Opt. 1, 607 (1962).

    ADS  Article  Google Scholar 

  64. 64.

    M. A. Remennyi, B. A. Matveev, N. V. Zotova, et al., Proc. SPIE 6585 (Optical Sensing Technology and Applications).

  65. 65.

    M. Aĭdaraliev, N.V. Zotova, C.A. Karandashev, et al., Fiz. Tekh. Poluprovodn. 27, 21 (1993) [Semiconductors 27, 19 (1993)].

    Google Scholar 

  66. 66.

    M. Aidaraliev, N. V. Zotova, S. A. Karandashov, et al., Semicond. Sci. Technol. 8, 1575 (1993).

    Article  ADS  Google Scholar 

  67. 67.

    B. A. Matveev, N. V. Zotova, S. A. Karandashov, et al., in Proceedings of the Conference “Photodetector Materials and Devices VII,” Proc. SPIE 4650, 173 (2002).

    ADS  Google Scholar 

  68. 68.

    B. I. Stepanov, Fundamentals of Spectroscopy of Negative Luminous Fluxes (Mir, Minsk, 1961).

    Google Scholar 

  69. 69.

    B. A. Matveev, N. V. Zotova, N. D. Il’inskaya, et al., US Patent 6876006 (2005).

  70. 70.

    B. A. Matveev, N. V. Zotova, S. A. Karandashov, et al., in Proceedings of the Conf. “Light-Emitting Diodes: Research, Manufacturing, and Applications V,” Ed. by H. Walter Yao and E. Fred Schubert, Proc. SPIE 4278, 189 (2001).

  71. 71.

    M. Aĭdaraliev, N. V. Zotova, S. A. Karandashev, et al., Fiz. Tekh. Poluprovodn. 36, 881 (2002) [Semiconductors 36, 828 (2002)].

    Google Scholar 

  72. 72.

    Yu. M. Zadiranov, N. V. Zotova, N. D. Il’inskaya, et al., Tech. Phys. Lett. 34(5), 405 (2008).

    Article  ADS  Google Scholar 

  73. 73.

    A. A. Kuznetsov, O. B. Balashov, E. V. Vasil’ev, et al., Prib. Sist. Upravlenie, Kontrol’, Diagnostika, No. 6, 55 (2003).

  74. 74.

    A. V. Sukach, V. V. Teterkin, N. V. Zotova, et al., Optoélektron. Poluprovodn. Tekh., No. 37, 215 (2002).

  75. 75.

    A. V. Sukach, V. V. Teterkin, C. V. Staryĭ, in Proceedings of the XVIII International Conference on Photoelectronics and Night Vision Equipment, Moscow, 2004, p. 29.

  76. 76.

    B. A. Matveev, N. V. Zotova, S. A. Karandashov, et al., in Proceedings of the 1st International Conference on Advanced Optoelectronics and Lasers (CAOL’2003), Alushta, Crimea, Ukraine, 2003, Vol. 2, p. 138.

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to B. A. Matveev.

Additional information

Original Russian Text © N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 6, pp. 641–657.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Zotova, N.V., Il’inskaya, N.D., Karandashev, S.A. et al. Sources of spontaneous emission based on indium arsenide. Semiconductors 42, 625 (2008). https://doi.org/10.1134/S1063782608060018

Download citation

PACS numbers

  • 85.60.Jb
  • 78.60.Fi
  • 78.55.Cr