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Effect of dissipative processes on the dispersion and instability of drift waves in a fine-stratified semiconductor structure

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Abstract

The damping of waves of the charge carrier density in a periodic semiconductor structure in an external electric field is investigated under the assumption that the period of the structure is much smaller than the electromagnetic radiation wavelength. The threshold conditions for the instability of carrier density waves propagating obliquely to the direction of the electric current are obtained. The existence of a resistive instability that can develop at drift velocities both higher and lower than the plasmon phase velocity is predicted.

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Authors and Affiliations

  1. Usikov Institute of Radiophysics and Electronics, National Academy of Sciences of Ukraine, ul. Akademika Proskury 12, Kharkov, 61085, Ukraine

    A. A. Bulgakov & O. V. Shramkova

Authors
  1. A. A. Bulgakov
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  2. O. V. Shramkova
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Original Russian Text © A.A. Bulgakov, O.V. Shramkova, 2006, published in Fizika Plazmy, 2006, Vol. 32, No. 11, pp. 981–986.

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Bulgakov, A.A., Shramkova, O.V. Effect of dissipative processes on the dispersion and instability of drift waves in a fine-stratified semiconductor structure. Plasma Phys. Rep. 32, 904–909 (2006). https://doi.org/10.1134/S1063780X06110031

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  • DOI: https://doi.org/10.1134/S1063780X06110031

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