Skip to main content
Log in

C-14 beta converter

  • The International Session-Conference of SNP PSD RAS “Physics of Fundamental Interactions”
  • Session 5—Nuclear Physics at High Energies
  • Published:
Physics of Particles and Nuclei Aims and scope Submit manuscript

Abstract

The study discusses the prospects for the development of low-voltage power supply sources. Beta isotope sources present great advantages for autonomous uninterrupted operation of remote devices, which gives an impulse to rapid development of betavoltaics. Silicon carbide homo- and hetero-structures serve as the isotope-based energy converters. We propose a new technology for isotope-based converter fabrication using silicon carbide and carbon-14 heterostructure as the active substance.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. P. I. Rappaport, J. J. Loferski, and E. G. Lindery, “A study program of possible uses new principle”, Nucleonics 15, 99 (1957).

    Google Scholar 

  2. L. C. Olsen, S. E. Seeman, and B. I. Griffen “Betavoltaic nuclear electric power sources”, Trans. Electron. Devices 2, 481 (1969).

    Google Scholar 

  3. V. V. Gusev, “Specific features of transformation of radioactive decay energy into electric energy using p-n silicon semiconductors”, in V. V. Gusev, V. M. Kodyukov, A. A. Pochtakov, A. A. Pustovalov, Eds., Radiatsionnaya Tekhnika (Radiation Technology), vol. 11, 61–67 (1975) [in Russian].

    Google Scholar 

  4. Yu. V. Lazarenko, A. A. Pustovalov, V. P. Napovalov “Small-Size Nuclear Sources of Electric Energy” (Energoatomizdat, Moscow, 1992) [in Russian].

    Google Scholar 

  5. RF Patent N 2461915 MPK.H01L31/04. “Nuclear Battery”.

  6. RF Patent N 2452060 MPK.H01L31/04 G01H 1/00. “Semiconductor beta radiation to electric energy converter”.

  7. US Patent No. 8866245. “Nuclear batteries”.

  8. US Patent No. 8802456. “Betavoltaic battery with a shallow junction and a method for making same”.

  9. US Patent No. 8487392. “High power density betavoltaic battery”.

  10. US Patent No. 20110291210. “Betavoltaic power converter die stacking”.

  11. US Patent No. 20120186637. “High-energy beta-particle source for betavoltaic power converter”.

  12. A. A. Reznev et al., “Prospects of development of a miniature current source based on betavoltaic effect using nickel-63 isotope as an active element”, Nano Micro Syst. Technol. 3, 14–16 (2009).

    Google Scholar 

  13. Yu. S. Nagornov, “Calculation of efficiency of power supply elements based on microchannel silicon and nickel-63 beta source”, Izv. Vyssh. Uchebn. Zaved. Povolzhsk. Reg. Fiz.-Mat. Nauki 3 (27), 136–145 (2013).

    Google Scholar 

  14. Yu. S. Nagornov, “Modern Aspects of Betavoltaic Effect Application” (UlGPU, Ul’yanovsk, 2012) 113 p. [in Russian].

    Google Scholar 

  15. C. J. Eiting, V. Krishnamoorthy, S. Rodgers, “Demonstration of radiation resistant, high efficiency SiC betavoltaic”, Appl. Phys. Lett. 88, 064101-1-064101-3 (2006).

    Article  Google Scholar 

  16. V. B. Anufrienko et al. “Applilcation of supermultilayered nanostructures for direct conversion of nuclear energy into electric energy”, Nano Micro Syst. Technol. 8, 30–38 (2008).

    Google Scholar 

  17. http://www.citylabs.net.

  18. www.betabatt.com.

  19. S-K. Lee et al., “Development of nuclear micro-battery with solid tritium source”, Appl. Radiat. Isotopes 67(7-8), 1234–1238 (2009).

    Article  Google Scholar 

  20. B. K. Liu et al. “Betavoltaics using scandium tritide and contact potential difference”, Appl. Phys. Lett. 92, 083511-1-083511-3 (2008).

    Google Scholar 

  21. B. K. Liu et al., “Tritium locked in silica using 248 nm KrF laser irradiation”, Appl. Phys. Lett. 88, 134101 (2006).

    Article  ADS  Google Scholar 

  22. RF Patent RU N 2084979 MKI.6 G21G1/06. “A method for extracting Carbon-14 radionuclide from neutron-irradiated aluminum nitride”.

  23. RF Patent RU N 2172533 MPK. G21G1/06. “A method for obtaining carbon-14 radionuclide”.

  24. V. Luchinin and Yu. Tairov, “Domestic semiconductor silicon carbide: A step toward parity”, Sovr. Elektron. 7, 4 (2009).

    Google Scholar 

  25. J. A. Lely, “Darstellung von Einkristallen von Siliciumcarbid und Beherschung von Art und menge Eingebauten Verunreinigungen”, Ber. Dt. Keram. 32, 229 (1955).

    Google Scholar 

  26. A. A. Kal’nin, V. V. Luchinin, F. Noibert, and Yu.M. Tairov, “Regularity of evolution of a crystalline structure in synthesis of substances with many structure-stable states”, Zh. Tekh. Fiz. 54 (7), 1388–1390 (1984).

    Google Scholar 

  27. Yu. M. Tairov and V. F. Tsvetkov, “Investigation of growth processes of ingots of silicon carbide single crystals”, J. Cryst. Growth 43, 209 (1978).

    Article  ADS  Google Scholar 

  28. M. J. Hernander, “Study of surface defects on 3C-SiC film grown on Si (III) by CVD”, J. Cryst. Growth 253, 95–101 (2003).

    Article  ADS  Google Scholar 

  29. A. S. Zubrilov, “Electric properties of hetero-transitions 3C-SiC/Si”, Semiconductors 28(10) 1742–1746 (1994).

    Google Scholar 

  30. C. J. Mogab and H. J. Leamy, “Conversion of epitaxial SiC by reaction with C2H2", J. Appl. Phys. 45(3), 1075–1084 (1974).

    Article  ADS  Google Scholar 

  31. A. Addamiano and J. A. Spragye, “Buffer-layer” technique for the growth of single crystal SiC on Si”, J. Appl. Phys. Lett. 44 (1), 525–527 (1974).

    ADS  Google Scholar 

  32. RF Patent RU N 2370851 MPK. H01L21/205. “A method of self-organizing endotaxy of mono 3C-SiC on Si substrate”.

  33. A. V. Gurskaya, V. I. Chepurnov, and M. V. Dolgopolov, “Energy converters of C-14 beta decay”, presented at 22 All-Russian Scientific Conference of Student Physicists and Young Scientists, Rostov, April 21–28, 2016, 183.

    Google Scholar 

  34. M. V. Dolgopolov, V. I. Chepurnov, A. V. Gurskaya, S. N. Podgornov, and A. N. Shcherbakov, “Heterostructure por-SiC/Si for applied use”, Int. Conf. “Electronics-2015”, 2015, 13.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. V. Gurskaya.

Additional information

Original Russian Text © A.V. Gurskaya, M.V. Dolgopolov, V.I. Chepurnov, 2017, published in Fizika Elementarnykh Chastits i Atomnogo Yadra, 2017, Vol. 48, No. 6.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Gurskaya, A.V., Dolgopolov, M.V. & Chepurnov, V.I. C-14 beta converter. Phys. Part. Nuclei 48, 941–944 (2017). https://doi.org/10.1134/S106377961706020X

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106377961706020X

Navigation