Abstract
A numerical model of trapping of the radiation-induced charge in the bulk and on the surface of the oxide layer of a MOS transistor has been developed. The model takes into account the generation of point defects under fast neutron irradiation. The volume and surface charges obtained by the numerical modeling have been used to calculate the drain—gate characteristic of the MOS transistor exposed to neutron irradiation in different doses and accompanying high-energy gamma-ray irradiation. To model the effect of neutron irradiation, different methods for estimating the rate of point defect generation in a two-component material (SiO2) have been developed. The simulated drain—gate characteristic is shown to agree well with the experimental data obtained at the concentration of hole traps and their capture cross sections lying within the published data for an unirradiated device after exposure to gamma rays from a 60Co gamma source and after irradiation with fast neutrons with an average energy of ∼1 MeV and accompanying gamma rays using a pool-type reactor.
Similar content being viewed by others
References
P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, IEEE Trans. Nucl. Sci. 31, 1453 (1984).
H. J. Barnaby, IEEE Trans. Nucl. Sci. 53, 3103 (2006).
K. I. Tapero, V. N. Ulimov, and A. M. Chlenov, Radiation Effects in Silicon Integrated Circuits for Space Applications (BINOM, Moscow, 2012) [in Russian].
S. N. Rashkeev, C. R. Cirba, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 49, 2650 (2002).
R. J. Graves, C. R. Cirba, R. D. Schrimpf, R. J. Milanowski, A. Michez, D. M. Fleetwood, S. C. Witczak, and F. Saigne, IEEE Trans. Nucl. Sci. 45, 2352 (1998).
O. V. Aleksandrov, Semiconductors 48, 523 (2014).
M. A. Petukhov and A. I. Ryazanov, Phys. At. Nucl 79, 1571 (2016).
M. A. Petukhov and A. I. Ryazanov, Yad. Fiz. Inzhin. 7, 145 (2016).
I. S. Esqueda, H. J. Barnaby, K. E. Holbert, and Y. Boulghassoul, IEEE Trans. Nucl. Sci. 58, 793 (2011).
S. M. Y. Hasan, S. L. Kosier, R. D. Schrimpf, and K. F. Galloway, IEEE Trans. Nucl. Sci. 41, 2719 (1994).
J. E. Gillberg, J. L. Titus, N. Hubbard, D. I. Burton, and C. F. Wheatley, in Proceedings of the Radiation Effects Data Workshop (IEEE, 2002).
S. J. Vaidya, D. K. Sharma, and A. N. Chandorkar, in Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits IPFA, 2003, p. 151.
V. Kilchytska, J. Alvorado, O. Militaru, G. Berger, and D. Flandre, Adv. Mater. Res. 276, 95 (2011).
J. M. Benedetto and H. Boech, IEEE Trans. Nucl. Sci. 33, 1318 (1986).
P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984).
C. D. Marshall, J. A. Speth, and S. A. Payne, J. Non-Cryst. Solids 212, 59 (1997).
V. V. Afanas’ev and A. Stesmans, J. Phys.: Condens. Matter 12, 2285 (2000).
F. B. McLean, IEEE Trans. Nucl. Sci. 27, 1651 (1980).
P. M. Lenahan, N. A. Bohna, and J. P. Campbell, IEEE Trans. Nucl. Sci. 49, 2708 (2002).
N. S. Saks and D. B. Brown, IEEE Trans. Nucl. Sci. 36, 1848 (1989).
S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. C. Witczak, A. Michez, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 51, 3158 (2004).
R. J. Krantz, L. W. Aukerman, and T. C. Zeitlow, IEEE Trans. Nucl. Sci. 34, 1196 (1987).
J. R. Brews, Solid-State Electron. 21, 345 (1978).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).
W. Chang, J. Electron. Mater. 21, 593 (1992).
T. Diaz de la Rubia and W. J. Phythian, J. Nucl. Mater. 191–194, 108 (1992).
R. L. Pfeffer, J. Appl. Phys. 57, 5176 (1985).
J. Wong, T. Diaz de la Rubia, M. W. Guinan, and M. Tobin, J. Nucl. Mater. 212–215, 143 (1994).
G. S. Was, Fundamentals of Radiation Materials Science (Springer, Berlin, 2007).
M. J. Norgett, M. T. Robinson, and I. M. Torrens, Nucl. Eng. Des. 33, 50 (1975).
D. M. Fleetwood, IEEE Trans. Nucl. Sci. 55, 2986 (2008).
J. M. Aitken and D. R. Young, J. Appl. Phys. 47, 1196 (1976).
I. C. Chen, S. Holland, and C. Hu, J. Appl. Phys. 61, 4544 (1987).
V. V. Afanas’ev and A. Stesmans, Europhys. Lett. 53, 233 (2001).
M. A. Jupina and P. M. Lenahan, IEEE Trans. Nucl. Sci. 36, 1800 (1989).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflicts of interest.
Additional information
Russian Text © The Author(s), 2018, published in Yadernaya Fizika i Inzhiniring, 2018, Vol. 9, No. 3, pp. 271–282.
Rights and permissions
About this article
Cite this article
Petukhov, M.A., Ryazanov, A.I. Modeling the Behavior of a MOS Transistor under Fast Neutron and Gamma Irradiation. Phys. Atom. Nuclei 82, 1466–1475 (2019). https://doi.org/10.1134/S1063778819120214
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063778819120214