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The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions

Abstract

The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height defect was measured in SiC detectors under irradiation by accelerated xenon ions with different energies. It is shown that this parameter in the spectroscopic analysis of Xe ions is ∼45% of the true energy of the particles in question.

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Funding

This work was supported in part by the Scientific Grant Agency of the Slovak Republic, project nos. 2/0152/16 and 2/0092/18.

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Correspondence to S. V. Rozov.

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The authors declare that they have no conflicts of interest.

Russian Text © The Author(s), 2019, published in Yadernaya Fizika i Inzhiniring, 2019, Vol. 10, No. 3.

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Hrubčín, L., Gurov, Y.B., Zat’ko, B. et al. The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions. Phys. Atom. Nuclei 82, 1682–1685 (2019). https://doi.org/10.1134/S1063778819120111

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  • DOI: https://doi.org/10.1134/S1063778819120111

Keywords

  • silicon carbide
  • detector
  • energy resolution
  • heavy ion
  • amplitude defect