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Physics of Atomic Nuclei

, Volume 80, Issue 11, pp 1647–1650 | Cite as

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

  • V. V. Samedov
Math Modeling in Nuclear Technologies
  • 12 Downloads

Abstract

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Keywords

semiconductor detector hemispherical geometry Fano factor product of charge carrier lifetime and mobility 

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  1. 1.National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)MoscowRussia

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