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Memory Effect in the Charge Transport in Strongly Disordered Antimony Films

  • ELECTRONIC PROPERTIES OF SOLID
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Abstract

We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages.

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ACKNOWLEDGMENTS

The authors are grateful to A.M. Ionov for fruitful discussions, S.V. Chekmazov for technical assistance, E.Yu. Postnova for electron microscopy, S.S. Khasanov for X-ray sample characterization, and V.M. Chernyak for preparation of amorphous films. We gratefully acknowledge financial support partially by the RFBR (project no. 19-29-03021), and RF State task.

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Authors and Affiliations

  1. Institute of Solide State Physics Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia

    N. N. Orlova, S. I. Bozhko & E. V. Deviatov

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  1. N. N. Orlova
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  2. S. I. Bozhko
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  3. E. V. Deviatov
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Correspondence to N. N. Orlova.

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Orlova, N.N., Bozhko, S.I. & Deviatov, E.V. Memory Effect in the Charge Transport in Strongly Disordered Antimony Films. J. Exp. Theor. Phys. 130, 610–615 (2020). https://doi.org/10.1134/S1063776120040111

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  • DOI: https://doi.org/10.1134/S1063776120040111

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