On the Enthalpy and Entropy of Point Defect Formation in Crystals
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A standard way to determine the formation enthalpy H and entropy S of point defect formation in crystals consists in the application of the Arrhenius equation for the defect concentration. In this work, we show that a formal use of this method actually gives the effective (apparent) values of these quantities, which appear to be significantly overestimated. The underlying physical reason lies in temperature-dependent formation enthalpy of the defects, which is controlled by temperature dependence of the elastic moduli. We present an evaluation of the “true” H- and S-values for aluminum, which are derived on the basis of experimental data by taking into account temperature dependence of the formation enthalpy related to temperature dependence of the elastic moduli. The knowledge of the “true” activation parameters is needed for a correct calculation of the defect concentration constituting thus an issue of major importance for different fundamental and application issues of condensed matter physics and chemistry.
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- 18.A. Glensk, B. Grabowski, T. Hickel, et al., Phys. Rev. X 4, 011018 (2014).Google Scholar
- 20.G. Bianchi, D. Mallejac, C. Janot, et al., C. R. Seances Acad. Sci., Ser. B 263, 1404 (1966).Google Scholar
- 34.P. A. Varotsos, and K. D. Alexopoulos, in Defects in Solids, Ed. by S. Amelinckx, R. Gevers, and J. Nihoul (North-Holland, Amsterdam, 1986).Google Scholar
- 38.H. Wawra, Z. Metallkd. 69, 518 (1978).Google Scholar