Anomalous hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor

Electronic Properties of Solid


The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 1018 cm–3 on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.


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Copyright information

© Pleiades Publishing, Inc. 2017

Authors and Affiliations

  • R. K. Arslanov
    • 1
  • T. R. Arslanov
    • 1
  • M. I. Daunov
    • 1
  1. 1.Institute of Physics, Dagestan Scientific CenterRussian Academy of SciencesMakhachkalaRussia

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