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Investigation of local tunneling current noise spectra on the silicon crystal surfaces by means of STM/STS

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Abstract

We report on a careful analysis of the local tunneling conductivity by means of ultra-high vacuum scanning tunneling microscopy/spectroscopy (STM/STS) technique in the vicinity of low-dimensional structures on the Si(111)–(7 × 7) and Si(110)–(16 × 2) surfaces. The power-law exponent α of low-frequency tunneling current noise spectra is investigated for different values of the tunneling contact parameters: relaxation rates, the localized state coupling, and the tunneling barrier width and height.

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Authors and Affiliations

  1. Department of Physics, Moscow State University, Moscow, 119991, Russia

    V. N. Mantsevich & N. S. Maslova

  2. Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, China

    G. Y. Cao

Authors
  1. V. N. Mantsevich
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  2. N. S. Maslova
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  3. G. Y. Cao
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Correspondence to V. N. Mantsevich.

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Mantsevich, V.N., Maslova, N.S. & Cao, G.Y. Investigation of local tunneling current noise spectra on the silicon crystal surfaces by means of STM/STS. J. Exp. Theor. Phys. 121, 259–262 (2015). https://doi.org/10.1134/S1063776115080105

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  • DOI: https://doi.org/10.1134/S1063776115080105

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