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Anomalous thermal expansion of InSe layered semiconductors in the low-temperature region

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Abstract

The temperature dependence of the linear thermal expansion coefficient (TEC) of an InSe single crystal in the (001) plane is measured in the temperature range 7–50 K. A peak in the thermal expansion is detected near T = 10 K, after which the sample shrinks upon heating. The effect of an external magnetic field of up to 6 T, which is parallel to the (001) plane, on the TEC is investigated. The observed partial suppression of the peak and crystal compression by the field indicates the relation of these anomalies to possible electron ordering in InSe layers.

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Correspondence to N. P. Shabanova.

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Original Russian Text © I.B. Krynetskii, V.A. Kulbachinskii, N.P. Shabanova, A.V. Tsikunov, R.I. Kovalenko, V.V. Rodin, S.Yu. Gavrilkin, 2013, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2013, Vol. 143, No. 5, pp. 1005–1008.

The article is based on a preliminary report delivered at the 36th Conference on Low-Temperature Physics (St. Petersburg, July 2–6, 2012).

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Krynetskii, I.B., Kulbachinskii, V.A., Shabanova, N.P. et al. Anomalous thermal expansion of InSe layered semiconductors in the low-temperature region. J. Exp. Theor. Phys. 116, 872–875 (2013). https://doi.org/10.1134/S1063776113050051

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