Abstract
The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the “quantum box” model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.
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Original Russian Text © A.B. Talochkin, I.B. Chistokhin, 2011, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2011, Vol. 140, No. 3, pp. 583–589.
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Talochkin, A.B., Chistokhin, I.B. Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots. J. Exp. Theor. Phys. 113, 510–515 (2011). https://doi.org/10.1134/S1063776111070107
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DOI: https://doi.org/10.1134/S1063776111070107