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Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots

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Abstract

The spectra of Raman scattering by folded acoustic phonons in Si/Ge superlattices with pseudomorphic layers of Ge quantum dots (QDs) grown by low-temperature (T = 250°C) molecular beam epitaxy are studied. New features of the folded phonon lines related to the resonant enhancement and unusual intensity ratio of the doublet lines that cannot be explained by the existing theory have been observed. The observed modes are shown to be related to the vibrations localized to the QDs and induced by the folded phonons of the Si spacer layers. The calculations performed in the model of a one-dimensional chain of atoms have allowed the nature of the localization of acoustic phonons attributable to a modification of the phonon spectrum of a thin QD layer to be explained. The observed intensity ratio of the folded phonon doublet lines is caused by asymmetry of the relief of the QD layers.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090, Russia

    A. B. Talochkin

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  1. A. B. Talochkin
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Correspondence to A. B. Talochkin.

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Original Russian Text © A.B. Talochkin, 2010, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 138, No. 6, pp. 1135–1143.

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Talochkin, A.B. Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots. J. Exp. Theor. Phys. 111, 1003–1009 (2010). https://doi.org/10.1134/S1063776110120137

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