Abstract
The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption.
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References
O. Bisia, Stefano Ossicini, and L. Pavesic, Surf. Sci. Rep. 38, 1 (2000).
A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
M. Rocchia, E. Garrone, F. Geobaldo, L. Boarino, and M. J. Sailor, Phys. Status Solidi A 197, 365 (2003).
M. Chiesa, G. Amato, L. Boarino, E. Garrone, F. Geobaldo, and E. Giamello, Angew. Chem., Int. Ed. 42, 5032 (2003).
L. Boarino, C. Baratto, F. Geobaldo, G. Amato, E. Comini, A. M. Rossi, G. Faglia, G. Lérondel, and G. Sberveglieri, Mater. Sci. Eng., B 69–70, 210 (2000).
L. T. Canham and A. J. Groszek, J. Appl. Phys. 72, 1558 (1992).
E. A. Konstantinova, L. A. Osminkina, K. S. Sharov, E. V. Kurepina, P. K. Kashkarov, and V. Yu. Timoshenko, Zh. Éksp. Teor. Fiz. 126(4), 857 (2004) [JETP 99 (4), 741 (2004)].
L. A. Osminkina, A. S. Vorontsov, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39(4), 482 (2005) [Semiconductors 39 (4), 458 (2005)].
A. V. Pavlikov, L. A. Osminkina, I. A. Belogorokhov, E. A. Konstantinova, A. I. Efimova, V. Yu. Timoshenko, and P. K. Kashkarov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39(11), 1385 (2005) [Semiconductors 39 (11), 1338 (2005)].
M. Chiesa, G. Amato, L. Boarino, E. Garrone, F. Geobaldo, and E. Giamello, Angew. Chem., Int. Ed. 42, 5032 (2003).
E. Garrone, S. Borini, P. Rivolo, L. Boarino, F. Geobaldo, and G. Amato, Phys. Status Solidi A 197,103 (2003).
S. Borini, A. M. Rossi, L. Boarino, and G. Amato, Mater. Res. Soc. Symp. Proc. 872, J18.30.1 (2005).
N. P. Mandal, S. Dey, and S. C. Agarwal, Mater. Res. Soc. Symp. Proc. 737, F3.51.1 (2003).
V. Yu. Timoshenko, Th. Dittrich, and F. Koch, Phys. Status Solidi B 222, R1 (2000).
V. Yu. Timoshenko, Th. Dittrich, V. Lysenko, M. G. Lisachenko, and F. Koch, Phys. Rev. B: Condens. Matter 64, 085 314 (2001).
R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960; Inostrannaya Literatura, Moscow, 1962).
E. A. Lebedev, E. A. Smorgonskaya, and G. Polisski, Phys. Rev. B: Condens. Matter 57, 14 607 (1998).
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, and N. N. Smirnova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(5), 609 (2001) [Semiconductors 35 (5), 588 (2001)].
É. A. Lebedev and T. Dittrich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36(10), 1268 (2002) [Semiconductors 36 (10), 1188 (2002)].
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Original Russian Text © P.A. Forsh, M.N. Martyshov, A.P. Latysheva, A.S. Vorontsov, V.Yu. Timoshenko, P.K. Kashkarov, 2008, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 134, No. 6, pp. 1195–1199.
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Forsh, P.A., Martyshov, M.N., Latysheva, A.P. et al. Mobility of charge carriers in porous silicon layers. J. Exp. Theor. Phys. 107, 1022–1026 (2008). https://doi.org/10.1134/S106377610812011X
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DOI: https://doi.org/10.1134/S106377610812011X