Abstract
We investigate the lateral low-temperature electron transport in shallow pseudomorphous two-sided δ-doped GaAs/In0.12Ga0.88As/GaAs quantum wells (QWs) depending on the QW width, doping level, and the presence of a thin central AlAs barrier. Such a barrier is shown to change the band structure and wave functions of electrons in the QWs, causing a significant change in the scattering of electrons and a change in their mobility.
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Original Russian Text © I.S. Vasilevskii, V.A. Kulbachinskiĭ, R.A. Lunin, G.B. Galiev, V.G. Mokerov, 2007, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 132, No. 1, pp. 197–199.
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Vasilevskii, I.S., Kulbachinskiĭ, V.A., Lunin, R.A. et al. Influence of state hybridization on low-temperature electron transport in shallow quantum wells. J. Exp. Theor. Phys. 105, 174–176 (2007). https://doi.org/10.1134/S1063776107070382
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DOI: https://doi.org/10.1134/S1063776107070382