Abstract
The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter.
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Original Russian Text © Yu.N. Khanin, E.E. Vdovin, L. Eaves, I.A. Larkin, A. Patane, O.N. Makarovskiĭ, M. Henini, 2007, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 132, No. 1, pp. 175–177.
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Khanin, Y.N., Vdovin, E.E., Eaves, L. et al. Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot. J. Exp. Theor. Phys. 105, 152–154 (2007). https://doi.org/10.1134/S1063776107070333
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DOI: https://doi.org/10.1134/S1063776107070333