Abstract
From studies of radiation effects in semiconductors at low temperatures, it is known that an interstitial atom migrates over a distance of up to 1000 Å (Watkins effect [1]). The interpretation of this effect is based on the inversion of potential energy curves of an interstitial atom in semiconductors when it changes its charge. At low temperatures, a cascade of radiationless transitions can occur between the ground and excited states of a relocalized electron, which leads to the coherent tunneling of the interstitial atom through the lattice. The description of this effect using the scattering matrix S leads to the dispersion law and to an equation for the effective mass of such a quasiparticle called an inverson.
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Original Russian Text © B.L. Oksengendler, N.N. Turaeva, 2006, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 130, No. 3, pp. 472–476.