Abstract
Hot pressing of a Si single crystal in the bulk of electrolytic Cr powder at 1213 K, with subsequent annealing in air, leads to the formation of an intermediate polycrystalline silicide layer at the interface between the initial components. The phase composition and microstructure of the transition layer and its vicinity were investigated by scanning electron microscopy, X-ray energy-dispersive microanalysis, and electron backscatter diffraction. The transition layer has a crystal structure of the hexagonal phase of chromium disilicide (sp. gr. P6222). An additional annealing up to 120 h leads to insignificant recrystallization of small grains into larger ones.
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Funding
This study was performed within the State assignment for the Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences using equipment of the Shared Research Center.
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Translated by Yu. Sin’kov
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Lukasov, M.S., Arkharova, N.A., Orekhov, A.S. et al. Microstructure of a CrSi2 Transition Layer Produced by Hot Pressing of Cr and Si. Crystallogr. Rep. 68, 615–620 (2023). https://doi.org/10.1134/S1063774523700281
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DOI: https://doi.org/10.1134/S1063774523700281