Abstract
Epitaxial In0.53Ga0.47As films, grown on GaAs substrates with the (100) and (111)А crystallographic orientations in the standard high-temperature and low-temperature modes, have been studied using X-ray diffraction (XRD). The parameters of GaAs substrates and In0.5Ga0.5As films were matched using step metamorphic buffers. A technique for determining the strain parameters of the crystal structure of elastically strained In0.53Ga0.47As layers with the (111) crystallographic orientation using high-resolution XRD data has been developed. The strain parameters of the crystal structure of the samples under study are determined. A correlation between the tilt angle of the In0.53Ga0.47As layers with respect to the GaAs substrate and degree of their relaxation are calculated; layers with weak relaxation are found to have larger tilt angles with respect to the substrate.
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Funding
This study was supported by the Ministry of Science and Higher Education of the Russian Federation within a State assignment for the Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences in the parts concerning the preparation of the samples using equipment of the Shared Research Center (project no. RFMEFI62119X0035) and the XRD analysis (project no. 075-15-2021-1362) and by the Russian Foundation for Basic Research in the part concerning the development of XRD analysis methods (project no. 19-29-12043mk).
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Translated by Yu. Sin’kov
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Folomeshkin, M.S., Volkovsky, Y.A., Prosekov, P.A. et al. X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer. Crystallogr. Rep. 67, 317–322 (2022). https://doi.org/10.1134/S1063774522030075
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DOI: https://doi.org/10.1134/S1063774522030075