Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

Zaytseva, Yu. S.; Borgardt, N. I.; Prikhodko, A. S.; Zallo, E.; Calarco, R.

doi:10.1134/S1063774521330014

Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge₃Sb₂Te₆ Layer Grown on a Silicon Substrate

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Published: 11 December 2021

Volume 66, page 1167, (2021)
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Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge₃Sb₂Te₆ Layer Grown on a Silicon Substrate

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Yu. S. Zaytseva¹,
N. I. Borgardt¹,
A. S. Prikhodko¹,
E. Zallo^2,3 &
…
R. Calarco²

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The Original Article was published on 23 July 2021

The surname of the fifth author should read Calarco.

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National Research University of Electronic Technology MIET, 124498, Zelenograd, Moscow, Russia
Yu. S. Zaytseva, N. I. Borgardt & A. S. Prikhodko
Paul Drude Institut für Festkörperelektronik, 10117, Berlin, Germany
E. Zallo & R. Calarco
Walter Schottky Institut, Physik Department, Technische Universität München, 85748, Garching, Germany
E. Zallo

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Yu. S. Zaytseva
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N. I. Borgardt
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A. S. Prikhodko
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E. Zallo
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R. Calarco
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Correspondence to Yu. S. Zaytseva.

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Zaytseva, Y.S., Borgardt, N.I., Prikhodko, A.S. et al. Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge₃Sb₂Te₆ Layer Grown on a Silicon Substrate. Crystallogr. Rep. 66, 1167 (2021). https://doi.org/10.1134/S1063774521330014

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Received: 06 September 2021
Revised: 06 September 2021
Accepted: 06 September 2021
Published: 11 December 2021
Issue Date: November 2021
DOI: https://doi.org/10.1134/S1063774521330014

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Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge3Sb2Te6 Layer Grown on a Silicon Substrate

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Erratum to: Electron Microscopy Study of Surface Islands in Epitaxial Ge₃Sb₂Te₆ Layer Grown on a Silicon Substrate