Abstract
The temperature conditions of nucleation of ZnO films on surface-oxidized silicon substrates during magnetron sputtering of a cermet ZnO–Zn target in an Ar atmosphere and chemical vapor deposition in a hydrogen flow upon Zn and H2O vapor interaction have been investigated. It is shown that the rate of zinc desorption from a growing surface increases significantly and the film growth is suppressed at a substrate temperature above 450°C. It is revealed that two-step deposition with preliminary low-temperature sublayer formation is necessary for ZnO film formation at high temperatures.
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ACKNOWLEDGMENTS
This study was performed on equipment of the Analytical Shared Research Center of the Dagestan Research Center of the Russian Academy of Sciences and the Shared Equipment Center of the Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences.
Funding
This study was performed within State assignments for the Amirkhanov Institute of Physics of the Dagestan Scientific Center of the Russian Academy of Sciences and the Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences and supported in part by the Russian Foundation for Basic Research, project nos. 19-07-00537 and 20-02-00373, and the Ministry of Science and Higher Education of the Russian Federation, project no. RFMEFI62119X0035.
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Abduev, A.K., Akhmedov, A.K., Asvarov, A.S. et al. Influence of Nucleation Conditions on the Structure of Zinc Oxide Films. Crystallogr. Rep. 65, 491–495 (2020). https://doi.org/10.1134/S1063774520030025
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DOI: https://doi.org/10.1134/S1063774520030025