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Dielectric Behavior and Conductivity of TlIn1 – xSbxSe2

  • PHYSICAL PROPERTIES OF CRYSTALS
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Abstract—

TlIn1 – xSbxSe2 (x = 0–0.005 Sb) single crystals have been grown by the Bridgman method from polycrystals, which were synthesized from initial high-purity chemical elements (Tl, In, Sb, Se). The influence of antimony dopant on the dielectric properties and ac conductivity of TlIn1 – xSbxSe2 (x = 0–0.005 Sb) single crystals has been investigated. The experimental study of the frequency dispersion of the dielectric coefficients and conductivity of TlIn1 – xSbxSe2 single crystals has revealed the nature of dielectric losses (losses on through conductivity), establish the hopping charge-transfer mechanism, and estimate the parameters of the states localized in the band gap.

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ACKNOWLEDGMENTS

This study was supported by the Science Development Foundation of the President of the Republic of Azerbaijan, grant nos. EİF-BGM-3-BRFTF-2+/2017-15/05/1-M-13.29.03.2018 and EİF-BGM-4-RFTF-1/2017-21/05/1-M-07.11.07.2018.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, AZ-1143, Baku, Azerbaijan

    S. N. Mustafaeva

  2. Nagiyev Institute of Catalysis and Inorganic Chemistry, National Academy of Sciences of Azerbaijan, AZ-1143, Baku, Azerbaijan

    S. M. Asadov

Authors
  1. S. N. Mustafaeva
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  2. S. M. Asadov
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Correspondence to S. N. Mustafaeva.

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Translated by Yu. Sin’kov

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Mustafaeva, S.N., Asadov, S.M. Dielectric Behavior and Conductivity of TlIn1 – xSbxSe2. Crystallogr. Rep. 63, 1163–1166 (2018). https://doi.org/10.1134/S1063774518070167

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  • DOI: https://doi.org/10.1134/S1063774518070167

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