Abstract
The Alexander–Haasen theory, which describes the deformation kinetics of silicon crystals, has been generalized for impurity crystals. The deformation kinetics of an impurity sample is calculated in a wide range of parameters, including the cases of partial and complete entrainment of impurities by moving dislocations. The developed model, despite its simplicity, adequately describes the qualitative transformation of the stress–strain curves of impurity silicon crystals in dependence of the impurity concentration and other material parameters. The manifestation of negative velocity dependence of the yield stress, observed in natural experiments, is analyzed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. Alexander, Dislocation in Solids, Ed. by F. R. N. Nabarro (North Holland, Amsterdam, 1986), Vol. 7, Ch. 35, p.113.
K. Sumino, Defects and Properties of Semiconductors: Defect Engineering, Ed. by J. Chikawa (KTK Scientific Publishers, Tokyo, 1987).
D. Maroudas and R. A. Brown, J. Mater. Res. 6, 2337 (1991).
B. V. Petukhov and P. A. Klyuchnik, Crystallogr. Rep. 57 (3), 388 (2012).
J. Cochard, I. Yonenaga, S. Gouttebroze, et al., J. Appl. Phys. 108, 103524 (2010).
P. A. Klyuchnik, Deform. Razrushenie Mater., No. 6, 2 (2015).
V. I. Nikitenko, B. Ya. Farber, and Yu. L. Iunin, JETP 66, 738 (1987).
M. Suezawa, K. Sumino, and I. Yonenaga, Phys. Status Solidi A 51, 217 (1979).
J. Cochard, I. Yonenaga, M. M’Hamdi, and Z. L. Zhang, J. Mech. Phys. Solids 61, 2402 (2013).
T. S. Gross, V. K. Mathews, R. J. De Angelis, and K. Okazaki, Mater. Sci. Eng. A 117, 75 (1989).
H. Siethoff and H. G. Brion, Philos. Mag. A 81, 145 (2001).
J. R. Patel and A. R. Chaudhuri, J. Appl. Phys. 34, 2788 (1963).
B. V. Petukhov, Crystallogr. Rep. 56 (1), 61 (2011).
B. V. Petukhov, Semiconductors 38, 369 (2004).
B. V. Petukhov, Phys. Status Solidi C 2, 1864 (2005).
K. Sumino, Metall. Mater. Trans. A 30, 1465 (1999).
U. Messerschmidt, Dislocation Dynamics during Plastic Deformation, Ed. by R. Hull et al., Springer Series in Material Science (Springer, Berlin, 2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © P.A. Klyuchnik, B.V. Petukhov, 2017, published in Kristallografiya, 2017, Vol. 62, No. 4, pp. 639–646.
Rights and permissions
About this article
Cite this article
Klyuchnik, P.A., Petukhov, B.V. Influence of impurity atmosphere on the deformation of silicon crystals. Crystallogr. Rep. 62, 622–628 (2017). https://doi.org/10.1134/S1063774517040101
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063774517040101