Abstract
The spatial arrangement of single linear defects in a Si single crystal (input surface {111}) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface are described. The sizes of observed linear defects with a spatial resolution of about 10 μm are estimated.
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Original Russian Text © D.A. Zolotov, A.V. Buzmakov, D.A. Elfimov, V.E. Asadchikov, F.N. Chukhovskii, 2017, published in Kristallografiya, 2017, Vol. 62, No. 1, pp. 12–16.
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Zolotov, D.A., Buzmakov, A.V., Elfimov, D.A. et al. The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups. Crystallogr. Rep. 62, 20–24 (2017). https://doi.org/10.1134/S1063774517010266
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DOI: https://doi.org/10.1134/S1063774517010266