Abstract
The transport properties of the delafossite CuAlO2 single crystal, grown by the flux method, are confined in ∞[AlO2] layers extending in the (001) plans. The dielectric properties are measured up to 490 K in the frequency range (102–105 Hz). The small variation of the dielectric loss tan(δ) is attributed to the wide space charge region. The linear plot log (conductivity) vs. 1000/T follows an Arrhenius type law and the results are discussed in terms of electron hopping among localized states. The activation energy (0.18 eV) gives an effective mass of 16m 0 indicating that the levels in the vicinity of the Fermi level are strongly localized. Hence, the increase of the conductivity (σ) results from a thermal activation of the mobility (μ300 K = 1.2 × 10−5 cm−2 V−1 s−1). The sign of hole like small polarons is that of p type carriers originating from oxygen intercalation. The thermopower is little temperature dependent and characteristic of non degenerate conductivity with a low holes concentration and a large concentration of surface states within the gap region.
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Brahimi, R., Rekhila, G., Trari, M. et al. Crystal growth and transport properties of CuAlO2 single crystal. Crystallogr. Rep. 59, 1088–1092 (2014). https://doi.org/10.1134/S1063774514070062
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DOI: https://doi.org/10.1134/S1063774514070062