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Suppression of growth domains in epitaxial ZnO films on structured (0001) sapphire surface

  • Surface and Thin Films
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Abstract

Zinc oxide layers have been grown by magnetron sputtering in an oxygen atmosphere on structured sapphire surfaces. The formation of ZnO islands oriented in two directions (the so-called domains) was observed on (0001) Al2O3 surfaces with steps spaced by a distance from several thousands to several tens of thousands of nanometers. The islands formed along steps on (0001) Al2O3 surfaces with an ordered terrace-step structure (and, subsequently, ZnO films) have only one orientation. Another method is proposed for suppressing domains during ZnO growth on (0001) Al2O3 d.

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Authors and Affiliations

  1. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia

    V. P. Vlasov, A. V. Butashin, V. M. Kanevskii & A. E. Muslimov

  2. Dagestan State University, Makhachkala, Russia

    V. A. Babaev, A. M. Ismailov & M. Kh. Rabadanov

Authors
  1. V. P. Vlasov
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  2. A. V. Butashin
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  3. V. M. Kanevskii
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  4. A. E. Muslimov
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  5. V. A. Babaev
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  6. A. M. Ismailov
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  7. M. Kh. Rabadanov
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Corresponding author

Correspondence to A. E. Muslimov.

Additional information

Original Russian Text © V.P. Vlasov, A.V. Butashin, V.M. Kanevskii, A.E. Muslimov, V.A. Babaev, A.M. Ismailov, M.Kh. Rabadanov, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 467–470.

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Vlasov, V.P., Butashin, A.V., Kanevskii, V.M. et al. Suppression of growth domains in epitaxial ZnO films on structured (0001) sapphire surface. Crystallogr. Rep. 59, 422–424 (2014). https://doi.org/10.1134/S1063774514030201

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  • DOI: https://doi.org/10.1134/S1063774514030201

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